2SC3649T-TD-E Allicdata Electronics
Allicdata Part #:

2SC3649T-TD-EOSTR-ND

Manufacturer Part#:

2SC3649T-TD-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 160V 1.5A SOT89-3
More Detail: Bipolar (BJT) Transistor NPN 160V 1.5A 120MHz 500m...
DataSheet: 2SC3649T-TD-E datasheet2SC3649T-TD-E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 500mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PCP
Base Part Number: 2SC3649
Description

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The 2SC3649T-TD-E is a single bipolar junction transistor (BJT) from Renesas Electronics. It is widely used in many applications, and it can be used as an amplifier, switch, or regulator. Its main purpose is to amplify and control small signals.

The 2SC3649T-TD-E is an NPN bipolar junction transistor and uses a three-terminal semiconductor device, which is composed of a semiconductor layer and two semiconductor contacts. The three terminals are the emitter, base and collector. It is packaged in a SOT-23 package, which is a small and thin package mainly used for surface mount devices (SMDs).

The working principle of 2SC3649T-TD-E is based on how a PNP transistor works, with the addition of a current controlling element. When a small base current enters the transistor, it changes the resistance or voltage between the collector and emitter terminals, depending on the type of the transistor. The resistance or voltage is then amplified and current flows from the collector to the emitter.

The 2SC3649T-TD-E offers a variety of features, making it a good choice for various applications. It has an operating temperature range of -55°C to +150°C, a maximum collector current of 800mA, a power dissipation of 1W, and a Collector-Emitter Voltage (VCEO) of 30V. It also has a high gain bandwidth and a low collector capacitance shut-off voltage. These features make it suitable for use in a variety of electronic devices, including amplifiers, switches, and regulators.

The 2SC3649T-TD-E can be found in many different applications, such as consumer electronics, security systems, automotive, power management, audio amplifiers and consumer audio. It is often used in circuits that require linear or switching applications. As an amplifier, it can be used to amplify weak signals or for power gain. It is also used as a switch to control an output voltage or current in a particular circuit. As a regulator, it can be used to regulate the power in a circuit.

In conclusion, the 2SC3649T-TD-E is a single bipolar junction transistor (BJT) from Renesas Electronics. It offers a variety of features, which makes it suitable for a variety of applications. It is mainly used as an amplifier, switch, or regulator, and it is found in many different applications across multiple industries.

The specific data is subject to PDF, and the above content is for reference

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