Allicdata Part #: | 2SC3324GRTE85LFTR-ND |
Manufacturer Part#: |
2SC3324GRTE85LF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN 120V 0.1A S-MINI |
More Detail: | Bipolar (BJT) Transistor NPN 120V 100mA 100MHz 150... |
DataSheet: | 2SC3324GRTE85LF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 120V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 6V |
Power - Max: | 150mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236 |
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2SC3324GRTE85LF is a commonly used bipolar junction transistor (BJT) that can be classified under the single transistor type. This type of transistor is known for its excellent performance and reliability, which is why it is frequently used in a wide range of applications, such as signal amplifying, signal switching, and power amplifying. Before understanding the application areas, let\'s have a brief look into the working principle of this transistor.
A bipolar junction transistor has three terminals: the base, the collector and the emitter. The base and the collector are PN junctions, where the P and N type materials are connected together. The emitter is a circuit, which links the base and the collector when the transistor is in operation. When the base-emitter junction is forward-biased and the collector-emitter junction is reverse-biased, the transistor is said to be in the active region. There will be a current in the collector circuit (collector current) when the base current reaches a certain level, and this current flow is called mutual conduction. Despite the different processes and properties, the basic operation of the transistor can be divided into three states: cut-off, saturation, and linear.
The 2SC3324GRTE85LF is mainly used for general purpose applications and is suitable for a wide variety of analog applications, such as amplifier circuits, switching circuits, multivibrators, and frequency dividers. In addition, it can also be used in high-current, low-voltage switching applications, power amplifier applications, and for voltage sensing in battery-operated systems. This transistor is also used for medium frequency amplifier circuits with high current gain, AC and DC frequency adaptation circuits, and integrated medium frequency amplifiers.
The main advantages of using this type of bipolar junction transistor are its high current gain, low switching noise, low distortion, high linearity, high breakdown voltage, and high frequency response. The collector-emitter breakdown voltage of the 2SC3324GRTE85LF is up to 200V, and it can handle a collector current up to 1A. It also has a low on-state saturation voltage, which is around 0.2V, and a high gain of up to 5. The high current gain and the low switch-on noise make the 2SC3324GRTE85LF a great choice for audio applications and switching power supplies.
In conclusion, the 2SC3324GRTE85LF is a popular single transistor whose applications range from general purpose analog amplifying to medium frequency amplifying, high-current low-voltage switching, and power amplifier applications. Due to its excellent performance, it has become a go-to transistor for many applications. This transistor is unique in that it offers a high current gain, as well as a low switch-on noise and a low on-state saturation voltage. With these advantages and its wide range of applications, the 2SC3324GRTE85LF is an excellent choice for any electronic design.
The specific data is subject to PDF, and the above content is for reference
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