2SC3585-T1B-A Allicdata Electronics
Allicdata Part #:

2SC3585-T1B-ATR-ND

Manufacturer Part#:

2SC3585-T1B-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: RF TRANSISTOR NPN SOT-23
More Detail: RF Transistor NPN 10V 35mA 10GHz 200mW Surface Mou...
DataSheet: 2SC3585-T1B-A datasheet2SC3585-T1B-A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Gain: 9dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Description

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The 2SC3585-T1B-A is an RF transistor, which is an advanced type of bipolar junction transistor (BJT). The transistor is capable of providing very high frequency content motions, and is commonly used for signal amplification, particularly in the areas of internet and satellite broadcasting. Because of its high frequency characteristics, it also finds applications in radio transmission.

The 2SC3585-T1B-A is a three-terminal semiconductor device consisting of two collector, one emitter and one base pins. It can be used in either common emitter or common base configurations, depending on the application. The transistor has several distinguishing characteristics like high linearity and low signal distortion, making it suitable for use in the communication industry.

The base pin of the transistor is used to directly modify the input signal voltage. When the input voltage is increased, the current flowing between the collector and the emitter also increases. This increase in collector current ultimately amplifies the signal voltage output from the collector pin. The current gain of the 2SC3585-T1B-A is dependent on the current through the base pin.

The frequency response of the 2SC3585-T1B-A is another important factor. The device has a wide bandwidth with a maximum frequency response of 1.5 GHz. This makes it suitable for use in different frequency applications such as wireless transmitters, wireless receivers and digital modulation systems. Furthermore, the device’s high gain and low noise figure makes it ideal for applications requiring accurate detection.

The 2SC3585-T1B-A is widely used in the communication industry for its robustness, low power consumption and good linearity. It is also used for a variety of audio and video applications such as car audio, home theatre and satellite broadcasting. Its ease of use has made it very popular for a range of applications.

In conclusion, the 2SC3585-T1B-A is a high frequency RF transistor that provides excellent linearity and low signal distortion. Its wide bandwidth and high gain make it suitable for communication and audio/video applications. Its versatility and robustness make it ideal for a wide range of applications and its affordability has ensured that it remains a popular choice among engineers.

The specific data is subject to PDF, and the above content is for reference

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