2SC3503FSTU Allicdata Electronics
Allicdata Part #:

2SC3503FSTU-ND

Manufacturer Part#:

2SC3503FSTU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 300V 0.1A TO-126
More Detail: Bipolar (BJT) Transistor NPN 300V 100mA 150MHz 7W ...
DataSheet: 2SC3503FSTU datasheet2SC3503FSTU Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 10mA, 10V
Power - Max: 7W
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126
Base Part Number: 2SC3503
Description

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Introduction

The 2SC 3503FSTU is a reliable, high performance, mono-polar NPN transistor. It is a special purpose transistor which has low noise, high gain and very low distortion. Its wide current range and fast recovery time makes it very well suited for high power application in the field of audio, video and switching.

2SC3503FSTU Application Field and Working Principle

The 2SC3503FSTU is used in various applications including low noise, high gain, fast switching, audio and video amplifiers, power amplifiers and high frequency oscillators. The device is especially suitable for high power applications, offering low noise, high gain, and low distortion.In terms of its working principle, the transistor acts as a current amplifier. It consists of three main parts, namely the base (B), the collector (C) and the emitter (E). By applying a voltage across the base-emitter junction, or by applying a current to the base, a small electric current can be induced in the collector, which can then be amplified based on the set current gain.The amplification effect of an NPN transistor occurs when the current passing through the base (B) of the transistor switches on, allowing a larger current to flow through the collector (C) and the emitter (E). This current flow is known as collector current (Ic) and it is determined by the ratio of the collector current (Ic) to the base current (Ib). The current gain of a bipolar transistor, known as β (Beta), varies depending on the transistor\'s design and size. The higher the β, the more amplification is achieved. In terms of its electrical characteristics, the current gain (β) of the transistor is typically 50 to 800, with a maximum collector current of 6A. The maximum collector-emitter breakdown voltage (BVceo) is 300V and the maximum emitter saturation voltage (Vce(sat)) is 0.3V at maximum collector current.In terms of its physical characteristics, the 2SC 3503FSTU transistor\'s body size is 1.8 x 7.7 mm, with a total weight of 0.015g.

Conclusion

The 2SC3503FSTU is a reliable, high performance, mono-polar NPN transistor, specially designed for low noise, high gain and fast switching applications. Its wide current range and fast recovery time make it ideal for high power applications such as audio, video and switching. The transistor operates by amplifying a small electric current that passes through the base, allowing a larger current to flow through the collector and the emitter. The transistor\'s β and current gain can range from 50 to 800, while its BVceo is 300V and its Vce(sat) is 0.3V at maximum collector current. The device physical characteristics includes a 1.8x7.7mm body size and a total weight of 0.015g.

The specific data is subject to PDF, and the above content is for reference

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