2SC3624-T1B-A Allicdata Electronics
Allicdata Part #:

2SC3624-T1B-A-ND

Manufacturer Part#:

2SC3624-T1B-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: TRANS NPN 50V 0.15A
More Detail: Bipolar (BJT) Transistor NPN 50V 150mA 250MHz 200m...
DataSheet: 2SC3624-T1B-A datasheet2SC3624-T1B-A Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1mA, 5V
Power - Max: 200mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59
Description

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2SC3624-T1B-A is a bipolar junction transistor (BJT). It is a single-package transistor commonly found on the market, especially in the radio-frequency range. The device features a current gain over that of a typical BJT, providing moderate power output with reasonable efficiency at high frequencies.

The 2SC3624-T1B-A is frequently used in a variety of circuitry, especially those which require medium-to-high frequency switching. Examples of this include motor control, communication, and audio circuit designs. More specific applications include AES programmable audio processors, house audio systems, RGB LED controllers, telecommunication repeaters, and buzzer drivers. The device is also extensively used throughout the automotive industry in power control and safety systems.

2SC3624-T1B-A BJT’s have a dual configuration, featuring a PNP (positive-negative-positive) collector-base-emitter terminal layout, with a base-emitter voltage rated at 4.5V, a collector-emitter voltage of 25V, and a maximum dissipation rating of 500mW at 25°C.

The device functions similar to any other BJT in that it’s controlled by electric current passing through the lowest level of conduction, the base. In this transistors emitter-base junction is forward biased and base-collector junction is reverse biased. When the base current increases, electrons will flow into the base and holes flow back into the collector, resulting in the 2SC3624-T1B-A being activated. This process in turn triggers a sporadic current through the device’s collector-emitter relationship, resulting in the base input current being amplified.

2SC3624-T1B-A transistors are rated up to 25V and feature a sharp cut-off frequency of 1.4GHz. They also offer minimal power consumption and improved power efficiency over standard transistors. The device uses a Zener diode to protect its internal switch from accidental voltage oppression. In addition, it also provides temperature compensation, which helps to reduce thermal drift during operation. The device has a high noise isolation distance and wide bandwidth, making it suitable for a range of radio-frequency applications.

In summary, the 2SC3624-T1B-A is a single-package bipolar junction transistor that offers cost effective, high-performance switching of medium-high frequency signals. It is used extensively in motor control, communication and audio circuit designs, and a wide range of automotive applications. Furthermore, the device is rated up to 25V and 1.4GHz, featuring minimal power consumption and improved power efficiency.

The specific data is subject to PDF, and the above content is for reference

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