Allicdata Part #: | 2SC3837KT146PTR-ND |
Manufacturer Part#: |
2SC3837KT146P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS NPN 20V 0.05A SOT-346 |
More Detail: | Bipolar (BJT) Transistor NPN 20V 50mA 1.5GHz 200mW... |
DataSheet: | 2SC3837KT146P Datasheet/PDF |
Quantity: | 6000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 50mA |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 4mA, 20mA |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 82 @ 10mA, 10V |
Power - Max: | 200mW |
Frequency - Transition: | 1.5GHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SMT3 |
Base Part Number: | 2SC3837 |
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2SC3837KT146P is a single bipolar junction transistor (BJT) manufactured by FUJITSU, which is widely used in the wiring field. It is a NPN transistor with a collector-emitter voltage of 130 V, a collector current of 4 A, and a power dissipation of 200 W. The transistor can support a maximum collector-base voltage of 200 V, a maximum forward or reverse current of 10 A and a maximum frequency of 1 MHz.
2SC3837KT146P can be generally used in RF power amplifiers in the household appliance, automotive, andcommunication fields. It is also commonly used in low-frequency power supplies applications, such as the voltage regulating devices in the power supply of household electrical appliances. It works as a switching device for circuits, providing control for high-power components such as motors and solenoids, and for circuits with highinput currents.
The principle of operation of 2SC3837KT146P starts with injecting minority carriers, also known as holes or electrons,into the base layer of the transistor. The electrons and holes, which are injected into the base layer, are attractedby the electric field, which exists between the base and the collector. This creates a current flow from the base to the collector, and determines the collector-emitter current. The collector-emitter current depends on the amount of current that flows through the base-emitter junction, and is thus used as the control parameter for these transistors.
The result of the electrons and holes flowing between the base and collector is the potential difference between the collector and the emitter, which creates a voltage feedback loop. The voltage feedback loop generates a resistance, which regulates the flow of current between the collector and the emitter. This mechanism further enables the transistor to function as a switch by rapidly changing the resistance, thus increasing or decreasing the collector-emitter current. In addition, a resistor is connected to the base layer of the transistor in order to adjust the base-emitter voltage and the collector current.
2SC3837KT146P is a reliable and robust transistor that is capable of dissipating high levels of heat and provides accurateswitching operations. It offers high gain performance and high input impedance with a maximal frequency of 1 MHz. It is specially designed for high-power applications, such as power supplies, motors,solonids, and voltage control devices in the household appliance and automotive industries.
The specific data is subject to PDF, and the above content is for reference
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