2SCR512P5T100

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 35mA, 700mA
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 100mA, 2V
Power - Max:	500mW
Frequency - Transition:	320MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	MPT3

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2SCR512P5T100 is a BJT transistor that is categorized as a single. This type of transistor is usually used in the electronics industry because it provides a variety of applications. Since it is a single type, it is generally used in circuits that require low power and low voltage.
The transistor has a package size of TO-3PN, which is a plastic housing with three pins that provides protection against heat, moisture and mechanical shock. This package size allows the electrical components inside the TO-3PN to stay operating longer and more efficiently than with other types of packages.
The 2SCR512P5T100 transistor has a collector-base breakdown voltage (BVCBO) of 315V, an emitter-base breakdown voltage (BVEBO) of 5V and a collector current (Ic) of 200mA. It also has an output capacitance of 10pF and a collector-emitter saturation voltage (VCE(sat)) of 1.2V.
The 2SCR512P5T100 transistor is commonly used for logic level conversion, analog signal conditioning, signal amplification and signal rotation. It is also ideal for use as a low voltage switch and linear control in low power circuits in which its low saturation voltage and low collector-emitter saturation current provide better performance than traditional bipolar transistors.
The working principle of the 2SCR512P5T100 transistor is based upon its three terminals, which are the base, collector and emitter. When an input voltage is applied to the base-emitter junction, a current is established between the base and emitter. This current then creates a magnetic field, which produces electrons between the emitter and collector. This number of electrons is regulated by the input voltage applied to the base-emitter junction, which eventually creates a current between the collector and emitter.
The 2SCR512P5T100 can be used in various applications, and is a suitable choice for those who are looking for a low power, low voltage and reliable transistor. Its low saturation voltage and low collector-emitter saturation current make it an ideal choice for use in low power circuits, and its three-terminal package provides protection against heat, moisture and mechanical shock. This makes it a popular choice for use in a variety of electronics projects.

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