Allicdata Part #: | 2SCR574D3TL1TR-ND |
Manufacturer Part#: |
2SCR574D3TL1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | POWER TRANSISTOR WITH LOW VCE(SA |
More Detail: | Bipolar (BJT) Transistor NPN 80V 2A 280MHz 10W Sur... |
DataSheet: | 2SCR574D3TL1 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 50mA, 1A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 100mA, 3V |
Power - Max: | 10W |
Frequency - Transition: | 280MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252 |
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The 2SCR574D3TL1 is a Transistors - Bipolar (BJT) - Single, a three-terminal semiconductor device for use in various electronic applications. It is made of P-type and N-type semiconductor materials and has a collector, base and emitter. In this device, electrons travel between the collector and the emitter and the signal and current flows from the base to the collector and/or from the emitter to the base. The 2SCR574D3TL1 is used to amplify and switch signals and current, and is often used in linear and low-frequency amplifiers, switches and many other electronic applications.
The technical features of the 2SCR574D3TL1 include the ability to work in temperatures from -65°C to +150°C, and with voltages up to 40V, a maximum gain cutoff frequency of 30MHz, and a maximum power dissipation of 3W. The device also has a high reverse breakdown voltage from -10V to -20V, and a low leakage current from 10 pA to 20 pA. The device has a maximum collector current of 10A, a maximum collector-emitter voltage of 800V, and a maximum emitter voltage of 5.6V.
The working principle of the 2SCR574D3TL1 is mainly based on the bipolar field-effect transistor technology which operates on the basis of the PNP-NPN pair. This technology utilizes the principle of the depletion layer, created by the P-type and N-type layers, which, when a current passes through them, demagnetizes the depletion zone and thus, the voltage travels from one layer to the other. This type of transistor therefore acts as an amplifier or a switch, and can be used in various application fields.
The 2SCR574D3TL1 is commonly used in various application fields such as radio broadcasting, medical electronics, and computer and communication systems. The device works well in receivers, amplifiers, switching applications, power supply systems, audio, and telecommunication systems. It can also be used in automotive, aerospace, and military equipment applications. The device is also suitable for applications in the fields of avionics, general control systems and for semi-conductor products.
The 2SCR574D3TL1 is a versatile and reliable device, capable of serving its purpose in multiple applications. It\'s easy to integrate into existing systems and is capable of offering a great performance. This feature makes it one of the most popular Transistors – Bipolar (BJT) – Single available today.
The specific data is subject to PDF, and the above content is for reference
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