
Allicdata Part #: | 2SCR514P5T100TR-ND |
Manufacturer Part#: |
2SCR514P5T100 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | NPN 80V 700MA MEDIUM POWER TRANS |
More Detail: | Bipolar (BJT) Transistor NPN 80V 700mA 320MHz 500m... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 700mA |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 15mA, 300mA |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 100mA, 3V |
Power - Max: | 500mW |
Frequency - Transition: | 320MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | MPT3 |
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Bipolar junction transistors (BJTs) have long been used as a means of amplifying signals in electronic circuits. The 2SRC514P5T100 is a PNP dual-gate integrated circuit (IC) designed for use in a variety of applications. It is particularly well suited for use in audio signal amplification circuits due to its superior linearity and low distortion characteristics. In this article, we will discuss the application fields and working principles of the 2SRC514P5T100.
The 2SRC514P5T100 is a versatile IC suitable for use in a variety of applications, ranging from audio signal amplification to power management and regulating high current loads in motor control systems. For example, it can be used as an analog signal amplification stage, pre-amplifier, or driver for power modules. Additionally, its dual-gate technology can be used in bi-stable circuits and as a switching element in instruments and portable devices, such as medical equipment, robots, and CCTV cameras.
The 2SRC514P5T100 is a three-terminal PNP BJT in a TO-package. Its base terminal is connected to the Input terminal, the collector is connected to the Output terminal, and the emitter is the GND terminal. Its two gates, referred to as Gate 1 and Gate 2, work in combination to control the functions of the transistor. Gate 1 operates as the input port, while Gate 2 serves as the output port.
When the Gate 1 is at a low logic level (0V) the entire circuit is OFF and no current flows. When Gate 1 is driven at a higher logic level (5V), the boundaries between the n-well and p-well switch between the gate and the collector move together and the transistor is turned ON. This allows current to flow from the input to the output. The Gate 2 is used to switch the transistor OFF, such as when using it in a bi-stable circuit. When Gate 2 is at a low level (0V) the transistor is OFF and no current flows. When Gate 2 is driven at a higher logic level (5V) the boundaries between the n-well and p-well switch between the gate and the collector move away from each other and the transistor is turned OFF.
The 2SRC514P5T100 is well suited for use in low frequency and audio signal amplification applications. Its excellent linearity characteristics make it a good choice for use in amplifier circuits where low distortion levels are desired. In addition to this, its low gate capacitance means that it is particularly suitable for use in low frequency signal conditioning applications.
The 2SRC514P5T100 is also capable of operating as an analog switch in bi-stable circuits. In such applications, it can be used to quickly switch between two states, enabling it to be used in a variety of systems, such as motor control systems and signal conditioning circuits.
In summary, the 2SRC514P5T100 is a versatile PNP dual-gate BJT suitable for use in a variety of applications, ranging from low frequency signal amplification to bi-stable circuits. Its excellent linearity and low gate capacitance make it particularly suited for use in audio signal amplification circuits. Additionally, its dual-gate technology can be used in bi-stable circuits and as a switching element in instruments, portable devices, and motor control systems.
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