Allicdata Part #: | 2SCR513PFRAT100TR-ND |
Manufacturer Part#: |
2SCR513PFRAT100 |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | NPN DRIVER TRANSISTOR (CORRESPON |
More Detail: | Bipolar (BJT) Transistor NPN 50V 1A 360MHz 500mW S... |
DataSheet: | 2SCR513PFRAT100 Datasheet/PDF |
Quantity: | 2000 |
1000 +: | $ 0.08454 |
Specifications
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 350mV @ 25mA, 500mA |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 180 @ 50mA, 2V |
Power - Max: | 500mW |
Frequency - Transition: | 360MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | MPT3 |
Description
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2SCR513PFRAT100 is a bipolar junction transistor (BJT) that is part of the NPN transistor family. It is a general-purpose transistor and is used for various switching applications.The 2SCR513PFRAT100 reach capabilities include a high current gain with a low noise figure and a large collector-emitter voltage range. This type of transistor is based on the idea of two semiconductor regions, n-type and p-type, that, when combined, form a diode. In this case, the transistor is an n-type base and a p-type collector which are connected to an emitter. The 2SCR513PFRAT100 can be connected as either a p-n-n or n-p-n transistor based on the voltage applied to it.When the base of the transistor is in the "n" region, it is called an n-p-n transistor. This configuration allows current to flow from the emitter to the collector. When a voltage is applied to the base, it creates an electric field which causes electrons to move from the emitter to the base. This brings about an increase in the current flowing from the emitter to the collector.When the base of the transistor is in the "p" region, it is called a p-n-n transistor. In this configuration, current is blocked from the emitter to the collector. However, when a voltage is applied to the base, it creates an electric field which causes holes to move from the collector to the base. This reduces the current flowing from the collector to the emitter.The 2SCR513PFRAT100 is best used for low-noise amplification, oscillations and oscillator circuits, and saturable switching circuits. Due to its high current gain and low noise characteristics, the 2SCR513PFRAT100 is also used in power switching and control applications. These transistors are used to control the flow of larger amounts of current with minimal noise.The 2SCR513PFRAT100 is also used in amplifiers, oscillators, and switching circuits as it has a high current gain as well as an excellent voltage-handling capability. This is due to the fact that it uses the p-n-p and n-p-n configuration which allows for a larger base-emitter voltage range and higher voltages overall.In addition, because the 2SCR513PFRAT100 has a low noise level and high frequency range, it is ideal for use in noise-sensitive circuits. This makes it perfect for use in RF circuits, as they require very low noise levels and high frequency outputs.Overall, the 2SCR513PFRAT100 is a versatile device that can be used in a variety of applications. It can be used in low-noise amplifiers, oscillators and oscillator circuits, switching applications, and power switching and control applications. This device is also perfect for noise-sensitive applications such as RF circuits.The specific data is subject to PDF, and the above content is for reference
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