Allicdata Part #: | 2SCR513PT100-ND |
Manufacturer Part#: |
2SCR513PT100 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS NPN 50V 1A MPT3 |
More Detail: | Bipolar (BJT) Transistor NPN 50V 1A 360MHz 2W Surf... |
DataSheet: | 2SCR513PT100 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 350mV @ 25mA, 500mA |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 180 @ 50mA, 2V |
Power - Max: | 2W |
Frequency - Transition: | 360MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | MPT3 |
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The 2SCR513PT100 is a single-channel bipolar junction transistor (BJT) and is widely used in various applications. It is an NPN-type transistor with a low-Noise figure, high-switching speed, and medium power. This transistor offers reliability and excellent switching performance.
The 2SCR513PT100 is a low-power transistor, typically up to 100mA, with a low-Noise figure usually between 0.2 and 1.2 dB. It is designed for small-signal switching applications and uses a 50-ohm resistor as a current limit. It features a maximum collector voltage, typically 5.3V and a maximum collector current, typically 50mA.
The 2SCR513PT100 features a low-Noise figure, which makes it suitable for applications that require low-Noise performance. Additionally, the 2SCR513PT100 operates at higher frequencies and exhibits excellent switching times, typically 5µs – 12µs.
The 2SCR513PT100 is provided in two packages, the TO-92 and the SOT-23. The TO-92 package is the standard package, and the SOT-23 is the surface-mount package. Both packages have the same electrical parameters.
The working principle of the 2SCR513PT100 is based on the PN junction diode principle. The transistor is constructed with a Base, Emitter, and Collector layer. The Base layer is responsible for controlling the current flow between the Collector and Emitter. The Base layer consists of a semiconductor material and a thin N-type layer, which provides an easy path for the electrons to travel.
The Collector layer is formed with an N-type semiconductor material and consists of a thicker layer of N-type material. This layer is used to collect the electrons travelling from the Base layer. The Emitter layer is formed with a P-type material and has many P-type sites which provide an easy path for the electrons to travel from the Collector layer to the Emitter layer. When current is applied to the Base layer, it creates a field across the Base-Emitter junction. This field causes the electrons to move from the Emitter to the Base layer, where they flow through the Base-Collector junction and into the Collector layer.
The 2SCR513PT100 is mainly used in small-signal and audio amplifiers, pre-amplifiers, and switching circuits. This transistor is also widely used in various switching applications such as automotive, industrial and consumer electronics.
The 2SCR513PT100 is an ideal choice for small-signal switching applications due to its low-Noise figure, excellent switching speed and medium power capabilities. This transistor is also widely used due to its excellent reliability and performance.
The specific data is subject to PDF, and the above content is for reference
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