Allicdata Part #: | 2SCR293PFRAT100TR-ND |
Manufacturer Part#: |
2SCR293PFRAT100 |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | NPN DRIVER TRANSISTOR (CORRESPON |
More Detail: | Bipolar (BJT) Transistor NPN 30V 1A 320MHz 500mW S... |
DataSheet: | 2SCR293PFRAT100 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.07620 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 350mV @ 25mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 270 @ 100mA, 2V |
Power - Max: | 500mW |
Frequency - Transition: | 320MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | MPT3 |
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2SCR293PFRAT100 Application Field and Working Principle
2SCR293PFRAT100 is a bipolar Junction Transistor (BJT), also known as a single-transistor. It is a three-terminal, active semiconductor device, with a current carrying junction between two layers of semiconductor material for controlling current flow in a circuit using a voltage applied to the base of the transistor.
The 2SCR293PFRAT100 is popularly used in radio frequency and small low-voltage applications like charging circuits, as well as applications utilizing voltage amplifier, level shifters and line drivers. The transistor is also used in sensoric transmission, baseband, and audio amplifiers and floating rectifiers.
Working Principle
The device is composed of two elements: a collector, which accepts current and a base which directs the current. The Collector and Base are connected by a thin base region. Initially, the electric current flows from the collector to the base only to a very small extent and the major current flows from collector to the Emitter. This current flow is determined by the biasing voltage which is applied from bias circuits that are used to polarize the transistor and then the current ratio between base-emitter junction to collector-emitter junction is determined by the biasing voltage.
When a small changed to the biasing voltage occurs, it causes the small current that flows through the base to change relative to the amount of current flowing through the collector. The change of current at the base causes the amount of current flowing through collector to change possibly to the point of it being entirely cut-off or completely conductive, which will in turn depend on the amount of biasing voltage applied.
Features and Benefits
The 2SCR293PFRAT100 provides a high current gain with low noise, fast switching speeds, and a low input capacitance. This transistor is designed for use in high-performance, high frequency applications, such as wireless communication and digital power conversion. It offers low profile packages, and is offered in a wide range of packages and topologies, making it well suited for use in demanding environments.
The device\'s advantages include low power consumption, high gain, low noise, and high accuracy. It is also designed for frequency-translational applications, providing good transient response characteristics that ensure fidelity and accuracy. Moreover, the device helps reduce the risk of system errors from potential over-reaction to input signal glitches.
In addition, the 2SCR293PFRAT100 offers excellent protection against over-voltage, over-current, and over-temperature. Its maximum power dissipation and thermal resistance ensures that the performance is maintained even in the most demanding conditions. Its extended voltage range also allows it to work in a wider range of dynamics and temperature conditions.
Conclusion
In conclusion, the 2SCR293PFRAT100 is a versatile single-transistor, used in a variety of applications in which it is needed to amplify and switch currents in radio frequency and small low-voltage applications. It features a high gain, low noise, and fast switching speeds, and is designed for use in high-performance, high frequency applications. It offers low profile packages, good protection against over-voltage, over-current, and over-temperature, and is designed for frequency-translational applications.
The specific data is subject to PDF, and the above content is for reference
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