2SCR533PFRAT100 Allicdata Electronics
Allicdata Part #:

2SCR533PFRAT100TR-ND

Manufacturer Part#:

2SCR533PFRAT100

Price: $ 0.12
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: NPN DRIVER TRANSISTOR (CORRESPON
More Detail: Bipolar (BJT) Transistor NPN 50V 3A 320MHz 500mW S...
DataSheet: 2SCR533PFRAT100 datasheet2SCR533PFRAT100 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.10796
Stock 1000Can Ship Immediately
$ 0.12
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V
Power - Max: 500mW
Frequency - Transition: 320MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MPT3
Description

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The 2SCR533PFRAT100 is a single bipolar junction transistor (BJT) designed to improve power density in the automotive and industrial markets. This device has a high current rating of up to 5.0 Amps and a maximum junction temperature of 175 °C. The device also features low turn-on voltage, low collector-emitter saturation voltage and low switch on resistance. It is capable of handling high voltages and currents with low power consumption.

The device has two primary applications. The first is to protect against short circuit and overload conditions in automotive and industrial systems. The second application is to be used as a power switch in DC-DC converter designs, where the device can control switching between two power states. The device can also be used in other applications such as power amplifiers and motor drives.

The 2SCR533PFRAT100 is an NPN transistor, meaning current will flow from the base to the collector, when the base is negative compared to the emitter. It is designed to work with a gate voltage between 1.0 V to 5.0 V and requires a base current of 1.0 mA for full conduction. The device has a high current gain of up to 300 and can operate at frequencies up to 100 MHz.

In addition to its applications, the 2SCR533PFRAT100 has reliability features that make it suitable for harsh conditions. The device is rated for 1,000 V in the collector-to-emitter junction, 200 V in the base-to-emitter junction, and a high reverse transfer capability of up to 1.5A. The 2SCR533PFRAT100 also has a high temperature rating, meaning it can withstand high operating temperatures.

Overall, the 2SCR533PFRAT100 is a versatile, high-performance single bipolar junction transistor that is suited for a wide range of applications. It has a high current rating and can handle high voltages and frequencies with low power consumption. It is also designed for harsh conditions and has various reliability features that make it suitable for automotive and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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