2SD0601A0L Allicdata Electronics
Allicdata Part #:

2SD0601A0LTR-ND

Manufacturer Part#:

2SD0601A0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS NPN 50V 0.1A MINI 3P
More Detail: Bipolar (BJT) Transistor NPN 50V 100mA 150MHz 200m...
DataSheet: 2SD0601A0L datasheet2SD0601A0L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V
Power - Max: 200mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1
Base Part Number: 2SD0601
Description

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A 2SD0601A0L transistor is a single-type bipolar junction transistor (BJT) device commonly used in a variety of electronic applications. These BJTs use a doped semiconductor as the base of the transistor, which provides a bipolar junction field-effect transistor (FET) component with a large current amplification factor (gain).

The 2SD0601A0L offers exceptional power dissipation features with a low saturation voltage of typically 1.2V. It is offered in a TO-220FP size package and has a collector-emitter voltage of 60V. Additionally, the 2SD0601A0L offers three internal current components: collector, base and emitter, which can be changed correspondingly to achieve different current characteristics.

The 2SD0601A0L offers high-voltage and high-current ratings, making it an ideal transistor for many applications. Some of the more common uses of the 2SD0601A0L are in motor control systems, Audio amplifiers, switching circuits, and voltage regulators. Additionally, the 2SD0601A0L can be used in logic circuits due to its low collector-emitter saturation voltage.

The 2SD0601A0L operates according to the Bipolar Junction Transistor (BJT) mechanism. In this mechanism, a narrow semiconductor region is created between the base and collector layer. When current is applied to the base, the electrons flow from the base to the collector, creating what is known as a current-gain current pairing. This pairing produces a signal that flows from the collector to the emitter, which is used to drive the signal to its target.

In addition to its bipolar junction transistor effect, the 2SD0601A0L also has the feature of current-gain. The current-gain effect is a result of the transistor’s symmetrical doping, which causes the current gain to be parameter-independent. This feature makes the 2SD0601A0L highly suitable for use in various applications.

The 2SD0601A0L is also a great choice for applications requiring high power transistors, such as automotive applications. Its high current-gain values, low saturation voltage, and wide temperature range makes it a good choice for applications where high-power transistors are needed. Additionally, this transistor can be used in many hybrid designs in which it will be used to switch both low- and high-voltage signals.

In conclusion, the 2SD0601A0L transistor is a high-quality single-type bipolar junction transistor (BJT) device. This transistor offers excellent power dissipation features, as well as excellent current-gain capabilities. Additionally, this transistor’s wide temperature range and low collector-emitter saturation voltage make it a suitable choice for applications that require high-power transistors. Its wide variety of uses and reliability make it an attractive choice for many electronic applications.

The specific data is subject to PDF, and the above content is for reference

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