2SD0814ARL

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	50mA
Voltage - Collector Emitter Breakdown (Max):	185V
Vce Saturation (Max) @ Ib, Ic:	1V @ 3mA, 30mA
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	130 @ 10mA, 5V
Power - Max:	200mW
Frequency - Transition:	150MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	Mini3-G1
Base Part Number:	2SD0814

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The 2SD0814ARL is a PNP High Voltage Transistor made of Silicon and is used in various applications. This type of transistor is generally classified as a Bipolar Junction Transistor (BJT). It is a single transistor that is uniquely designed to provide high-voltage switching and amplification, making it suitable for many uses.

2SD0814ARL Application Field

The 2SD0814ARL has a variety of applications. In general, its power handling capabilities allow it to be used as an audio amplifier, power control, and power switching control. Its high voltage capability makes it suitable for applications such as DC-DC converters and motor controls. Additionally, it also provides high speed switching for inverters and high power throughput.

Unique Features

The 2SD0814ARL has unique features that make it a suitable choice for various applications. Its maximum collector-to-emitter voltage rating is 2500V, making it suitable for use in higher power applications. It also has a high current rating of 10A peak, which makes it suitable for high power applications. The transistor\'s collector-emitter saturation voltage is a low 0.14V, meaning it can be used at much lower currents, making it suitable for a variety of applications. Additionally, it has a high switching frequency of 80kHz, making it suitable for use in high-speed applications.

2SD0814ARL Working Principle

The 2SD0814ARL is an N-Channel Bipolar Junction Transistor (BJT). This means it has two P-type and one N-type layers. Applying a positive voltage to the base provides a current between the collector and the emitter. This current is called the collector current. This current is then used to control the flow of current from the collector to the emitter. This is how the transistor amplifies and switches current.

Final Remarks

The 2SD0814ARL is a high voltage N-Channel Bipolar Junction Transistor (BJT). It has a variety of features that make it suitable for use in power switching, audio amplifiers, and high speed switching applications. Furthermore, its high collector-to-emitter voltage rating, low collector-to-emitter saturation voltage, and high current rating make it a suitable choice for high-power applications. Its working principle is based on the flow of current from the collector to the emitter when a positive voltage is applied to the base.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description