2SD0814ASL Allicdata Electronics
Allicdata Part #:

2SD0814ASLTR-ND

Manufacturer Part#:

2SD0814ASL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS NPN 185V 0.05A MINI-3P
More Detail: Bipolar (BJT) Transistor NPN 185V 50mA 150MHz 200m...
DataSheet: 2SD0814ASL datasheet2SD0814ASL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 185V
Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 185 @ 10mA, 5V
Power - Max: 200mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1
Base Part Number: 2SD0814
Description

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2SD0814ASL is a bipolar transistor belonging to the Single BJT category.

Its main application field is for circuit switching, in the configuration of a voltage amplifier, the device does not require a large base current, so it can be used as a base drive for low power switching transistors. 2SD0814ASL can also be used in the design of power amplifiers.

2SD0814ASL has a maximum collector current of 800mA and a maximum collector-base voltage of 800V. It is suited for switching circuits using voltages up to 30V and currents up to 1A.

2SD0814ASL Working Principle

BJT transistors work on the principle of Base-Emitter depending voltages, which are vectors of an electric current flow between the base, emitter, and collector. The high current gain of the BJT is achieved due to the current modulation in the base and emitter region.

The collector current is mainly determined by the current flowing through the base terminal. When the base-emitter junction is forward biased, majority carriers (electrons or holes) are injected into the base region. These carriers combine with majority carriers already in the emitter region and form a ‘zone of high concentration’. This ‘zone’ of high concentration is called the collector-base (CB) junction.

When the voltage between the base-emitter and the CB junction is increased, the collector current will increase. Conversely, the collector current will decrease when the voltage between the base-emitter and the CB junction is reduced. This phenomenon is called the Gain-Voltage Characteristic of a BJT.

2SD0814ASL is designed to operate over an extended gain-voltage range. In order to keep the collector current constant, the base current needs to be adjusted based on the voltage difference between the base-emitter and the CB junction. This enables the CB junction to remain at its optimum gain level, causing the collector current to remain constant.

The 2SD0814ASL transistor has a wide range of applications including low-power switching circuits, power amplifiers, and output stages of digital equipment. With its high reliability, wide gain range and wide voltage range, the 2SD0814ASL is an excellent choice for many types of applications.

The specific data is subject to PDF, and the above content is for reference

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