Allicdata Part #: | 2SD0814ASLTR-ND |
Manufacturer Part#: |
2SD0814ASL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS NPN 185V 0.05A MINI-3P |
More Detail: | Bipolar (BJT) Transistor NPN 185V 50mA 150MHz 200m... |
DataSheet: | 2SD0814ASL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 50mA |
Voltage - Collector Emitter Breakdown (Max): | 185V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 3mA, 30mA |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 185 @ 10mA, 5V |
Power - Max: | 200mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | Mini3-G1 |
Base Part Number: | 2SD0814 |
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2SD0814ASL is a bipolar transistor belonging to the Single BJT category.
Its main application field is for circuit switching, in the configuration of a voltage amplifier, the device does not require a large base current, so it can be used as a base drive for low power switching transistors. 2SD0814ASL can also be used in the design of power amplifiers.
2SD0814ASL has a maximum collector current of 800mA and a maximum collector-base voltage of 800V. It is suited for switching circuits using voltages up to 30V and currents up to 1A.
2SD0814ASL Working Principle
BJT transistors work on the principle of Base-Emitter depending voltages, which are vectors of an electric current flow between the base, emitter, and collector. The high current gain of the BJT is achieved due to the current modulation in the base and emitter region.
The collector current is mainly determined by the current flowing through the base terminal. When the base-emitter junction is forward biased, majority carriers (electrons or holes) are injected into the base region. These carriers combine with majority carriers already in the emitter region and form a ‘zone of high concentration’. This ‘zone’ of high concentration is called the collector-base (CB) junction.
When the voltage between the base-emitter and the CB junction is increased, the collector current will increase. Conversely, the collector current will decrease when the voltage between the base-emitter and the CB junction is reduced. This phenomenon is called the Gain-Voltage Characteristic of a BJT.
2SD0814ASL is designed to operate over an extended gain-voltage range. In order to keep the collector current constant, the base current needs to be adjusted based on the voltage difference between the base-emitter and the CB junction. This enables the CB junction to remain at its optimum gain level, causing the collector current to remain constant.
The 2SD0814ASL transistor has a wide range of applications including low-power switching circuits, power amplifiers, and output stages of digital equipment. With its high reliability, wide gain range and wide voltage range, the 2SD0814ASL is an excellent choice for many types of applications.
The specific data is subject to PDF, and the above content is for reference
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