Allicdata Part #: | 2SD0602A0LTR-ND |
Manufacturer Part#: |
2SD0602A0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS NPN 50V 0.5A MINI 3P |
More Detail: | Bipolar (BJT) Transistor NPN 50V 500mA 200MHz 200m... |
DataSheet: | 2SD0602A0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 30mA, 300mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 85 @ 150mA, 10V |
Power - Max: | 200mW |
Frequency - Transition: | 200MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | Mini3-G1 |
Base Part Number: | 2SD0602 |
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The 2SD0602A0L is a single transistor (Bipolar Junction Transistor, or BJT) device used to amplify or switch electronic sysstems. It is particularly suited to applications that require high gain, high frequency operation, and high power handling.
A BJT consists of three layers of semiconductor material each of which allows electrons to flow in only one direction. These layers are the base, the collector and the emitter. In the 2SD0602A0L, the collector is a small piece of P-doped (acceptor) semiconductor material and the base is also a small piece of P-doped semicondutor material. The emitter is usually a large piece of N-doped (donor) semiconductor material and is connected to the positive terminal of the power supply. When a small current is applied to the base of the transistor, the electrons are attracted to the base region and some of the electrons pass through the base into the collector region. As a result, a greater current passes through the collector to the emitter, which causes a higher current to be supplied to the load. The current gain of a 2SD0602A0L transistor is usually greater than 100.
The working principle of the 2SD0602A0L is based on this current gain. This gain is achieved by the amplification of electrons, which travel through the various layers of semiconductor material. The electrons are attracted to the base region, where most of them pass through the thin base region and into the collector region. Some electrons are also lost due to recombination, however, this is a very small amount compared to the electrons that pass through the base to the collector. Because the current gain of the transistor is so high, the current flowing through the load is much greater than the current supplied by the base.
The 2SD0602A0L is particularly well suited to applications where speed and efficiency are required. It can be used in amplifiers, switches, RF amplifiers, and high frequency applications. The 2SD0602A0L is also a good choice for high power applications, such as power supplies and motor control, since it is capable of handling large currents and voltages. This makes it an ideal choice for many types of applications.
In summary, the 2SD0602A0L is a single transistor (Bipolar Junction Transistor, or BJT) device with a very high current gain. It is well suited for applications requiring a high frequency of operation, high power handling and excellent speed of operation. It can be used in a wide variety of applications, including amplifiers, switches, RF amplifiers and high power applications. The current gain of the 2SD0602A0L is typically greater than 100, making it an excellent choice for both high-power and high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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