Allicdata Part #: | 2SD0874A0LTR-ND |
Manufacturer Part#: |
2SD0874A0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS NPN 50V 1A MINI-PWR |
More Detail: | Bipolar (BJT) Transistor NPN 50V 1A 200MHz 1W Surf... |
DataSheet: | 2SD0874A0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 85 @ 500mA, 10V |
Power - Max: | 1W |
Frequency - Transition: | 200MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | MiniP3-F1 |
Base Part Number: | 2SD0874 |
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:The 2SD0874A0L is a single bipolar junction transistor (BJT) designed for a wide range of applications and signal processing. It is a high voltage, uni-polar, NPN, PNP and P-channel device designed for a wide range of power and signal stages.
A single bipolar junction transistor (BJT) is basically an electronic device consisting of two diodes connected in series, with a control element in between them. The base-emitter junction of the transistor can be biased with a voltage and current source, allowing it to act as a switch for either voltage or current. When the base-emitter junction is forward biased, current can flow from the collector to the emitter, and the transistor is said to be “on”. Conversely, when the base-emitter junction is reverse biased, current cannot flow from the collector to the emitter, and the transistor is said to be “off”.
The 2SD0874A0L is designed to be linear and very wide in its range of applications and signal processing. It is designed for high voltage and power and signal stages, and works with both NPN and PNP transistors. Moreover, it is designed to work with both uni-polar and P-channel operations, giving it a wide range of uses. Its features include high output power, high gain, low voltage drop, and good thermal characteristics. It is very cost effective due to its low voltage and power consumption.
The 2SD0874A0L can be installed in a wide range of applications and voltage and current levels. It works best with high voltage and large current stages. It can also be used in electronic circuits for signal processing and amplification. The 2SD0874A0L is suitable for switching applications, as it has a low voltage drop and can control a broad range of current levels.
The 2SD0874A0L’s basic working principle is based on the concept of biasing its base-emitter junction with a voltage and current source. The transistor is then able to act as a switch in either voltage or current. When the base-emitter junction is forward biased, current can flow from the collector to the emitter, and the transistor is said to be “on”. Conversely, when the base-emitter junction is reverse biased, current cannot flow from the collector to the emitter, and the transistor is said to be “off”.
In summary, the 2SD0874A0L is a single bipolar junction transistor (BJT) designed for a wide range of applications and signal processing. Its features include high output power, high gain, low voltage drop, and good thermal characteristics. It is designed to work with both uni-polar and P-channel operations, giving it a wide range of uses. Moreover, it can be used in electronic circuits for signal processing and amplification. The 2SD0874A0L’s basic working principle is based on the concept of biasing its base-emitter junction with a voltage and current source.
The specific data is subject to PDF, and the above content is for reference
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