Allicdata Part #: | 2SD0875GSLTR-ND |
Manufacturer Part#: |
2SD0875GSL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS NPN 80V 0.5A MINIP-3 |
More Detail: | Bipolar (BJT) Transistor NPN 80V 500mA 120MHz 1W S... |
DataSheet: | 2SD0875GSL Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 30mA, 300mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 185 @ 150mA, 10V |
Power - Max: | 1W |
Frequency - Transition: | 120MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | MiniP3-F2 |
Base Part Number: | 2SD0875 |
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The 2SD0875GSL is a NPN silicon epitaxial transistor suitable for power amplifier applications. It is a type of Transistors - Bipolar (BJT) - Single. This silicon epitaxial transistor is made of high-quality materials and is designed for higher power levels than normal NPN types. The 2SD0875GSL has excellent switching characteristics, enabling it to be used for many near-zero bias applications.
In terms of its application field, the 2SD0875GSL is mainly used in power amplifiers. It has excellent gain characteristics and is especially suitable for applications requiring high output power such as stereo car audio systems. It is also used in applications like low power general purpose amplifiers, switches, digital logic, and relay drivers. The 2SD0875GSL is also suitable for general purpose switching, logic devices, and digital logic input/output stages.
In terms of its working principle, the 2SD0875GSL operates when a current passes through the base-emitter junction and causes a larger current to flow from the collector to the emitter. This process is known as amplification. As the current increases, the voltage drop across the collector-emitter terminal reduces and the transistor switches on. When the voltage drops below a certain level (known as the cut-off voltage), the transistor switches off.
The 2SD0875GSL has several other important characteristics, such as the collector-emitter breakdown voltage and the maximum allowable collector current. The breakdown voltage is an important parameter as it determines the maximum acceptable input voltage. The maximum collector current is also important, as it determines the maximum power the transistor can handle. Other important parameters include the thermal resistance and the switching frequency.
The 2SD0875GSL is designed to perform well in high power applications, and it has the required characteristics to do so. Its excellent switching characteristics make it suitable for many applications. It has excellent gain characteristics and is suitable for near-zero bias applications. As mentioned above, it is used in power amplifiers, low power general purpose amplifiers, switches, digital logic, and relay drivers.
In summary, the 2SD0875GSL is a type of Transistors - Bipolar (BJT) - Single. It is mainly used in power amplifier applications and is suitable for high power applications. It has excellent gain characteristics and is suitable for near-zero bias applications. It has important parameters such as the collector-emitter breakdown voltage, the maximum allowable collector current, the thermal resistance, and the switching frequency. All of these parameters are important in ensuring that the transistor works well and in providing reliable performance.
The specific data is subject to PDF, and the above content is for reference
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