Allicdata Part #: | 2SK06620RLTR-ND |
Manufacturer Part#: |
2SK06620RL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | JFET N-CH 20MA 150MW SMINI-3 |
More Detail: | JFET N-Channel 20mA 150mW Surface Mount SMini3-G1 |
DataSheet: | 2SK06620RL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Drain to Source Voltage (Vdss): | 30V |
Current - Drain (Idss) @ Vds (Vgs=0): | 500µA @ 10V |
Current Drain (Id) - Max: | 20mA |
Voltage - Cutoff (VGS off) @ Id: | 100mV @ 10µA |
Input Capacitance (Ciss) (Max) @ Vds: | 14pF @ 10V |
Power - Max: | 150mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SMini3-G1 |
Base Part Number: | 2SK0662 |
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2SK06620RL is a JFET (junction gate field effect transistor) device. It is a a semiconductor device that utilizes both junction field effect and gate field effect. It operates by having a thinDepletion Layer formed by applying reverse-biased voltage in a gate electrode on the very surface of a p-type semiconductor substrate. This thin layer prevents or allows carrier flow, thus controlling the output current.
The 2SK06620RL is usually used as an amplifier or voltage-operated switch. It is often used in audio amplifiers, video amplifiers, and DC amplifier circuits. It can also be used in gain boost control circuit, low frequency preamplifier, and high frequency amplifier circuits.
This JFET has a high input resistance, which is in the order of 1012 ohms, and operates from -5V to +5V. It can handle high power dissipation up to 4W. It is suitable for applications that require a high input resistance and voltage operations from -5 to +5 volts.
One of the major advantages of the 2SK06620RL is its flexibility. It can be used for a variety of applications. Its high input resistance makes it ideal for use in audio amplifiers, and its voltagerated operation makes it suitable for video amplifiers, DC amplifiers, and gain boost control circuits. It is also perfect for low frequency preamplifiers and high frequency amplifiers because of its high power dissipation.
The working principle of 2SK06620RL is based on its junction gate field effect. It has an insulated gate electrode which, when voltage is applied in a particular direction, creates a thin Depletion Layer on the surface of a p-type semiconductor substrate. This layer then controls the amount of current flow and affects the output of the transistor.
This transistor also has a low threshold voltage that can be adjusted by changing the connection given to it. This allows the user to control the current flow and output of the device. This low threshold voltage is useful in applications that need precise control of the current flow.
In summary, 2SK06620RL is a JFET device suitable for a variety of applications. Its high input resistance and voltage-operated operation make it ideal for audio amplifiers, video amplifiers, gain boost control circuit, low frequency preamplifier, and high frequency amplifier circuits. It is also known for its flexible, low threshold voltage and high power dissipation, making it a great choice for many applications. Its working principle is based on its junction gate field effect, which allows it to control the current flow and affect the output of the transistor.
The specific data is subject to PDF, and the above content is for reference
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