Allicdata Part #: | 2SK0601G0LTR-ND |
Manufacturer Part#: |
2SK0601G0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | MOSFET N-CH 80V 0.5A MINIP-3 |
More Detail: | N-Channel 80V 500mA (Ta) 1W (Ta) Surface Mount Min... |
DataSheet: | 2SK0601G0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.5V @ 1mA |
Package / Case: | TO-243AA |
Supplier Device Package: | MiniP3-F2 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 45pF @ 10V |
Vgs (Max): | 20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 500mA (Ta) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The 2SK0601G0L is a high-performance, low-power-consumption, N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for various applications. It has a VDSS (drain-source voltage) rating of 60 V and an Rds (on) rating of 0.12 ohm. This MOSFET features high-speed switching with a typical turn-on time of 25 nano-seconds and a maximum turn-off time of 5 micro-seconds. The 2SK0601G0L is also capable of handling large voltage signals, making it suitable for use in load switching, converter and inverter circuits, dc-dc converters, and more.
A MOSFET is an electrically operated switch that is designed to provide circuit switching and switching of large power signals. At the heart of a MOSFET is an insulated-gate field effect transistor (IGFET) which acts as a switch between two main terminals. The main working principle of a MOSFET is to allow current to flow only between two terminals - the source and the drain - when a given electric field is applied across the gate (the third terminal). The electric field is generated by applying a voltage on the gate with respect to the source. When a voltage is applied on the gate, the MOSFET is either turned “on” (if the voltage is positive with respect to the source) or “off” (if the voltage is negative).
The key advantages of the 2SK0601G0L MOSFET include low on-resistance, fast switching speed, and low power losses. In addition, it is also compact and able to support both low-level and high-level switching functions. One of the important features of this MOSFET is the excellent surge voltage capability, allowing the device to handle large voltage signals without failure. The 2SK0601G0L has a high-efficient stable breakdown voltage and is suitable for use in various power applications such as load-switching, dc-dc converters, and more.
The 2SK0601G0L is typically applied in power circuits of various types, such as portable devices and desktop PCs. Due to its excellent performance, it has gained much popularity in applications of computer power supplies and notebook power management systems. The low on-resistance and fast switching speed of the 2SK0601G0L make it an excellent choice for power regulation and conversion applications.
In conclusion, the 2SK0601G0L is a versatile N-channel MOSFET with excellent performance characteristics and a variety of application domains. It is versatile and can handle large voltage signals in switching, converter and inverter circuits, dc-dc converters, and more. It’s fast switching speed and low on-resistance make it ideal for use in power regulation and conversion applications, such as portable devices, desktop PCs, and other power management systems.
The specific data is subject to PDF, and the above content is for reference
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