Allicdata Part #: | 2SK060100LTR-ND |
Manufacturer Part#: |
2SK060100L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | MOSFET N-CH 80V 500MA MINI-PWR |
More Detail: | N-Channel 80V 500mA (Ta) 1W (Ta) Surface Mount Min... |
DataSheet: | 2SK060100L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.5V @ 1mA |
Package / Case: | TO-243AA |
Supplier Device Package: | MiniP3-F1 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 45pF @ 10V |
Vgs (Max): | 20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 500mA (Ta) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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2SK060100L is a kind of single N-channel junction field effect transistors (JFETs), which is specifically designed to operate as an analog switch at medium level voltages and is useful in a variety of applications. These transistors are the perfect choice for digital and analog circuits, especially those that require a high degree of linearity and very low distortion.
The JFETs have a very simple structure and are made up of an n-type semiconductor material with two PN junctions. The transistor is characterized by its low drain-source resistance (RDS) and high-frequency response. The 2SK060100L has a VGS of -2.0V to -20V, a ID of 1.0A, and a RDS of 1es. It also has a maximum power dissipation of 1W and a drain-source breakdown voltage of 20V.
The working principle of an N-Channel JFET is relatively simple. A voltage applied between the source and the gate, known as the gate-source voltage (VGS), causes the JFET PN junction to form. This junction allows electrons to flow through the channel region of the transistor. When the gate-source voltage is positive, the PN junction allows electrons to accumulate in the area between the gate and the source and conversely, when the gate-source voltage is negative, the electrons are repelled from this region and flow away. This action controls the flow of current through the channel region. As the gate-source voltage increases, the channel narrows, reducing the current flow and conversely, as the gate-source voltage reduces, the channel widens, increasing the current flow.
In addition to being used as an analog switch, the 2SK060100L can also be used for other applications such as high-level signal processing, active termination, high speed data switching and more. Its low drain-source resistance and wide gate-source voltage range make it ideal for these applications. Its low noise performance and temperature stability further increases its suitability for many different analog applications.
The 2SK060100L is suitable for many general-purpose applications as it has a number of key features that make it an attractive choice. These features include a low input capacitance, low gate-source capacitance, high conductance and low power dissipation. Moreover, the JFETs are both low cost and reliable, making them the perfect choice for a variety of applications.
In conclusion, the 2SK060100L is a reliable and efficient N-channel junction field effect transistor (JFET) with a variety of applications. It has a VGS of -2.0V to -20V and an ID of 1.0A. It is suitable for applications such as high-level signal processing, active termination, high speed data switching and more. Additionally, it has a low drain-source resistance, low noise and temperature stability, making it an ideal choice for a variety of analog applications.
The specific data is subject to PDF, and the above content is for reference
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