Allicdata Part #: | 2SK0664G0LTR-ND |
Manufacturer Part#: |
2SK0664G0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | MOSFET N-CH 50V 100MA SMINI-3 |
More Detail: | N-Channel 50V 100mA (Ta) 150mW (Ta) Surface Mount ... |
DataSheet: | 2SK0664G0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.5V @ 100µA |
Package / Case: | SC-85 |
Supplier Device Package: | SMini3-F2 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 150mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 15pF @ 5V |
Vgs (Max): | 8V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 50 Ohm @ 20mA, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 100mA (Ta) |
Drain to Source Voltage (Vdss): | 50V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The 2SK0664G0L is a single N-channel MOSFET transistor. It is a particularly useful and versatile device, minimizing power loss, aiding in the control of excessive current flow, providing circuit protection, and amplifying electrical signals. In this article, we will examine the application fields and operating principles of the 2SK0664G0L.
Application Field
The 2SK0664G0L is mainly used in computing, communications and consumer applications. It is notably present in notebook computers, gaming consoles, server systems, industrial power supplies, and low-power mobile devices. Due to its low on-state resistance, it is useful in switching applications requiring high frequency operations as well as low gate charge.
Working Principle
The 2SK0664G0L is a field-effect transistor (FET) that operates on the principle of voltage gating of electrical current through a channel using a gate electrode. It is comprised of a source, a drain, and a gate that can control the flow of current through the channel. A voltage applied to the gate will induce a voltage difference across the channel, thus controlling the current flow between the source and the drain.
When the gate voltage is low, the current flow between the source and the drain is blocked. However, when a voltage is applied to the gate a channel is created between the source and the drain, allowing current to flow. This phenomenon is known as the channel enhancement effect.
The channel between the source and the drain takes the form of a “depletion zone”. As the gate voltage is increased, the depletion zone decreases in size, thus increasing the current flow between the source and the drain. Conversely, with a decrease in the gate voltage, the depletion zone increases in size, reducing the current flow in the channel. This phenomenon is known as the channel depletion effect.
The 2SK0664G0L has an advantage over its predecessors in that it has lower gate charge for the same level of on-state resistance. This ensures that the gate charge does not contribute significantly to the power loss. Furthermore, the low on-state resistance ensures that it consumes less power, thus reducing heat dissipation.
The 2SK0664G0L is a very versatile device due to its ability to be used as a switch, an amplifier, and a regulator. It can be used to regulate voltage, current flow, or frequency. This makes it ideal for digital signal processing as well as power control systems. Furthermore, it can be used to amplify electrical signals for a wide range of applications.
In conclusion, the 2SK0664G0L is a single N-channel MOSFET transistor. It is an incredibly versatile device that can be used for various applications, from computing and wiring to consumer electronics. Its low on-state resistance minimizes power loss and improves the efficiency of voltage regulation. It is most commonly employed in computing and communication applications, providing circuit protection and amplifying electrical signals.
The specific data is subject to PDF, and the above content is for reference
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