2SK0665G0L Allicdata Electronics

2SK0665G0L Discrete Semiconductor Products

Allicdata Part #:

2SK0665G0LTR-ND

Manufacturer Part#:

2SK0665G0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: MOSFET N-CH 20V .1A SMINI-3
More Detail: N-Channel 20V 100mA (Ta) 150mW (Ta) Surface Mount ...
DataSheet: 2SK0665G0L datasheet2SK0665G0L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Rds On (Max) @ Id, Vgs: 50 Ohm @ 20mA, 5V
Package / Case: SC-85
Supplier Device Package: SMini3-F2
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 150mW (Ta)
FET Feature: --
Vgs (Max): 8V
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Series: --
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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A field effect transistor (FET) is an electronic device that produces electric fields, allowing for the flow of current through them. The 2SK0665G0L is a common example of a FET, and is a single insulated-gate field-effect transistor (IGFET). This type of transistor is the most commonly used in modern electronic design, due to its high reliability, low power dissipation and flexibility.

The 2SK0665G0L FET is particularly well-suited for application in high-temperature and high-frequency environments, due to its wide operating temperature range and excellent frequency characteristics. It is often used for power control in automotive electronics, such as on-board navigation systems, as well as in other industrial applications including digital signal processing, communications and photovoltaic systems.

The 2SK0665G0L FET works on the principle of the MOSFET (metal-oxide-semiconductor field-effect-transistor), where two conducting terminals (source and drain) are separated by a semiconductor layer known as the “gate”. The gate is then connected to an external voltage in order to control the current flow between the source and drain. When the applied gate voltage is increased, the current between the source and the drain will increase, up to the limit of the maximum current rating of the device.

The 2SK0665G0L FET has an benefits inherent with its usage. Unlike other types of FETs, which require a voltage to control the gate, the 2SK0665G0L does not require any gate voltage for its operation. This means that it can be used in devices without any external power supply, as well as in order to conserve battery life. Additionally, it has very low "on-resistance", meaning that it consumes less power when it is in use.

The 2SK0665G0L is a fast switching, robust device, making it suitable for high-frequency and high-temperature applications. It offers excellent frequency characteristics, and low power dissipation, which makes it ideal for power control in digital signal processing, communications, and photovoltaic systems.

Overall, the 2SK0665G0L FET is a reliable and efficient device, which is why it is such a popular choice in many electronics applications. Its low power consumption, high reliability and excellent frequency characteristics make it particularly well-suited for power control and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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