2SK0665G0L Discrete Semiconductor Products |
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Allicdata Part #: | 2SK0665G0LTR-ND |
Manufacturer Part#: |
2SK0665G0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | MOSFET N-CH 20V .1A SMINI-3 |
More Detail: | N-Channel 20V 100mA (Ta) 150mW (Ta) Surface Mount ... |
DataSheet: | 2SK0665G0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Rds On (Max) @ Id, Vgs: | 50 Ohm @ 20mA, 5V |
Package / Case: | SC-85 |
Supplier Device Package: | SMini3-F2 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 150mW (Ta) |
FET Feature: | -- |
Vgs (Max): | 8V |
Vgs(th) (Max) @ Id: | 3.5V @ 100µA |
Series: | -- |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 100mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A field effect transistor (FET) is an electronic device that produces electric fields, allowing for the flow of current through them. The 2SK0665G0L is a common example of a FET, and is a single insulated-gate field-effect transistor (IGFET). This type of transistor is the most commonly used in modern electronic design, due to its high reliability, low power dissipation and flexibility.
The 2SK0665G0L FET is particularly well-suited for application in high-temperature and high-frequency environments, due to its wide operating temperature range and excellent frequency characteristics. It is often used for power control in automotive electronics, such as on-board navigation systems, as well as in other industrial applications including digital signal processing, communications and photovoltaic systems.
The 2SK0665G0L FET works on the principle of the MOSFET (metal-oxide-semiconductor field-effect-transistor), where two conducting terminals (source and drain) are separated by a semiconductor layer known as the “gate”. The gate is then connected to an external voltage in order to control the current flow between the source and drain. When the applied gate voltage is increased, the current between the source and the drain will increase, up to the limit of the maximum current rating of the device.
The 2SK0665G0L FET has an benefits inherent with its usage. Unlike other types of FETs, which require a voltage to control the gate, the 2SK0665G0L does not require any gate voltage for its operation. This means that it can be used in devices without any external power supply, as well as in order to conserve battery life. Additionally, it has very low "on-resistance", meaning that it consumes less power when it is in use.
The 2SK0665G0L is a fast switching, robust device, making it suitable for high-frequency and high-temperature applications. It offers excellent frequency characteristics, and low power dissipation, which makes it ideal for power control in digital signal processing, communications, and photovoltaic systems.
Overall, the 2SK0665G0L FET is a reliable and efficient device, which is why it is such a popular choice in many electronics applications. Its low power consumption, high reliability and excellent frequency characteristics make it particularly well-suited for power control and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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