Allicdata Part #: | 2SK0615-ND |
Manufacturer Part#: |
2SK0615 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | MOSFET N-CH 80V 500MA 3-SIP |
More Detail: | N-Channel 80V 500mA (Ta) 1W (Ta) Through Hole M-A1 |
DataSheet: | 2SK0615 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.5V @ 1mA |
Package / Case: | 3-SIP |
Supplier Device Package: | M-A1 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 45pF @ 10V |
Vgs (Max): | 20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 500mA (Ta) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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The 2SK0615 is a single junction, N-Channel MOSFET (metal oxide semiconductor field effect transistor) with a TO-220F package. Developed by Toshiba, this transistor is suitable for a range of high current applications requiring low on-resistance such as power supplies and high-current switching. The 2SK0615 has an active region protected by a reverse-biased diode connection between its gate and source, making it useful in many power switching applications.
2SK0615 Application Fields
The application fields of the 2SK0615 can include power supplies, DC-DC converters, polarity protection, high-current switching, and power conversion. Its low on-resistance, combined with its high-current handling capabilities and thermal stability, makes it ideal for use in many high-current, low voltage applications. It also has a low input/output capacitance and low gate charge, making it suitable for high-frequency applications as well.
2SK0615 Working Principle
The 2SK0615 transistor operates in a standard N-Channel MOSFET configuration and is based on the junction field effect transistor (JFET) structure. The JFET is formed by a triangle-shaped two-dimensional electron gas (2DEG) layer and is supported by p-type and n-type doped regions. The electric current flow is mainly through the 2DEG, and when a voltage is applied between the source and gate region, a second electric field is created in the 2DEG and controls the current between the source and drain.
The electric field strength in the JFET can be varied between the gate and source due to the reverse-biased diode connection between them. This feature makes the 2SK0615 an ideal choice for high-current switching applications. The low on-resistance of the device also makes it a good choice for power supplies under heavy load conditions.
To further improve on the conductive characteristics of the device, the 2SK0615 features a fast turn-on period for switching low-voltage loads. This fast turn-on period ensures that the circuit can efficiently handle high-frequency switching scenarios.
Conclusion
The 2SK0615 P-Channel MOSFET from Toshiba is a highly versatile device for use in a variety of high-current switching applications. Its low on-resistance and reverse-biased diode connection between the gate and source enable it to efficiently handle high frequencies and heavy load conditions. This transistor also features a fast turn-on period, making it an ideal choice for power supplies and DC-DC converters.
The specific data is subject to PDF, and the above content is for reference
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