3N163-E3

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Field effect transistors (FETs) have become one of the most popular active components in current integrated circuits (ICs). As one of the most widely used FETs, MOSFET, with its excellent performance, has become an indispensable device in the electronics industry. 3N163-E3 is the latest development of MOSFETs by EUEEE with high performance, in particular specialized for switching applications. This article aims to explain the application field and working principle of 3N163-E3.

3N163-E3 is a N-channel enhancement mode MOSFET which is especially suitable for high speed switching applications. With its low on-state resistance and very fast switching capabilities, 3N163-E3 provides excellent performance in regulating high current and voltage. Thus, it is widely used in a variety of electronic devices including adapters, voltage regulators, converters, switching power supplies, and solar converters. It is also used in a number of applications such as power management, LED lighting, smart appliances and automotive applications.

The 3N163-E3 consists of a channel of n-type inversion layers formed on a surface of a P-type well. A source and drain side are connected on opposite sides of the channel. The surface of the channel is separated from the source and drain sides by a thin gate oxide layer. The gate is used to control the inversion layer formation. When the gate voltage is applied, the inversion layer width is expanded, which causes the channel between the source and the drain to be formed. Consequently, the resistance between the source and the drain is reduced. The controlled gate voltage creates a voltage–current relationship along the channel which determines the level of resistance. With this effect, the resistance between the source and the drain can be changed easily and accurately to control the current in a circuit, which is the basic function of MOSFET.

The 3N163-E3 MOSFET has a maximum drain-source breakdown voltage of 500V, and drain current limit of 28A. Moreover, it has a low on-state resistance of 0.0075 Ω and a fast switching time of 1.3ns, which makes it a powerful choice for the applications which require high power switching. It also has a good thermal performance with a maximum junction temperature of 150℃, allowing it to work safely even without a heat sink. Moreover, the low gate-source threshold voltage of 1V and maximum gate-source voltage of ±20V mean it can easily be driven by regular logic circuits. Therefore, 3N163-E3 can be used as a high current, high speed MOSFET switch in many applications.

In conclusion, the 3N163-E3 MOSFET is an excellent choice for high speed, high current switching applications. It has a low on-state resistance, high breakdown voltage, and fast switching speed, which make it an ideal choice for power management, LED lighting, smart appliances, and automotive applications. Therefore, it is a popular choice for many electronic products.

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