3N163 Allicdata Electronics
Allicdata Part #:

3N163-ND

Manufacturer Part#:

3N163

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 40V 50MA TO-72
More Detail: P-Channel 40V 50mA (Ta) 375mW (Ta) Through Hole TO...
DataSheet: 3N163 datasheet3N163 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 20V
Rds On (Max) @ Id, Vgs: 250 Ohm @ 100µA, 20V
Vgs(th) (Max) @ Id: 5V @ 10µA
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V
FET Feature: --
Power Dissipation (Max): 375mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-72
Package / Case: TO-206AF, TO-72-4 Metal Can
Description

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The 3N163 is a type of field effect transistor (FET). FETs are a type of transistor used to amplify or switch electronic signals and electrical power. The 3N163 is a single type MOSFET, the most common type of FET. It is a three terminal device, consisting of a source, a gate, and a drain. These terminals are fixed contacts on the transistor, and they allow current to pass either into or out of the channel, depending on the voltage of the gate. In this way, the 3N163 acts as a switch in certain circuits and can be controlled easily.

A MOSFET works using a principle known as field effect. Basically, the electrons flow through a silicon oxide gate, a thin gate oxide layer, and the MOSFET device. As the voltage of the gate is changed, the distance between the two electrodes is also changed. This difference in distance produces a field effect, which affects the flow of electrons in the channel. By adjusting the gate voltage, the current in the channel can be controlled and thus, the MOSFET can be used as a switch.

The application of the 3N163 MOSFET ranges from switching digital signals in digital circuits such as those used in computers to switching high power in analog circuits. In digital circuits, the 3N163 can be used for switching digital signals, since it requires very little current to switch and can provide very high speeds with very low on-resistance. In analog circuits, it can be used to switch many different types of signals, including high power analog signals. It also has a high current capability, so it can be used to switch high power signals.

The 3N163 is a versatile device, due to its ease of use, its low cost, and its ability to switch between many different types of signals. It is often used in power amplifiers, video amplifiers, switching regulators, RF amplifiers, and many other types of analog and digital circuits. It is also used in many high-powered applications, such as switching high voltage signals and controlling motorcurrent. Therefore, the 3N163 MOSFET is a very useful device and can be found in many different types of electronic applications.

In summary, the 3N163 is a type of MOSFET, used for switching digital and analog signals, and is capable of handling high power. It has three terminals, the source, the gate, and the drain, and uses field effect to control the flow of current in the channel. The application of the 3N163 ranges from switching digital circuits to switching high power analog signals, and it is a versatile and useful device used in many different circuits.

The specific data is subject to PDF, and the above content is for reference

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