5HN01C-TB-EX Allicdata Electronics
Allicdata Part #:

5HN01C-TB-EX-ND

Manufacturer Part#:

5HN01C-TB-EX

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 50V 100MA CP3
More Detail:
DataSheet: 5HN01C-TB-EX datasheet5HN01C-TB-EX Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Part Status: Obsolete
Description

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5HN01C-TB-EX Application Field and Working Principle

The 5HN01C-TB-EX is a unique series of field-effect transistors (FETs) from Toshiba Electronics. It is a type of low-voltage N-Channel MOSFET that is used for controlling a variety of switching operations. In this article, we will discuss the application field, working principle, and other important parameters of 5HN01C-TB-EX.

Application Field:

The most common application of 5HN01C-TB-EX transistors is in high-speed switching applications, such as interface circuits, gate drivers, and power management circuits. It is typically used as a power switch or an integrated bridge in applications involving the control of electricity and signal processing. Some of the other applications include power supplies, switching power amplifiers, motor control circuits, and industrial automation systems.

Working Principle:

The 5HN01C-TB-EX is a type of N-Channel MOSFET and it is powered by a voltage source. When the voltage supply on the FET is higher than the threshold voltage, it creates an electric field between the source and drain terminals. This creates a conductive path between the source and drain terminal, allowing the current to flow. Due to its low threshold voltage, the 5HN01C-TB-EX is capable of switching on and off quickly, allowing for a wide range of applications.

Other Important Parameters:

In addition to its applications and working principles, the 5HN01C-TB-EX has a low on-resistance and a high switching frequency. This allows users to design faster, smaller, and more efficient circuits. Furthermore, it has a wide operating temperature range of -55°C to 150°C, making it suitable for a variety of application environments.

The 5HN01C-TB-EX also has a breakdown voltage of 50V and a current capability of 5A. Additionally, it features a drain to source voltage of 10V and an on-state resistance of 10mΩ. This allows for efficient switching operations in a wide range of voltage and current applications.

Conclusion:

The 5HN01C-TB-EX series of transistors is a type of low-voltage N-Channel MOSFET that is used for controlling a variety of switch operations. It is most commonly used in high-speed switching applications, such as interface circuits, gate drivers, and power management circuits. Furthermore, it has a low on-resistance, a high switching frequency, and a wide operating temperature range, making it suitable for a variety of application environments.

The specific data is subject to PDF, and the above content is for reference

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