| Allicdata Part #: | 5HN01M-TL-H-ND |
| Manufacturer Part#: |
5HN01M-TL-H |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 50V 0.1A MCP3 |
| More Detail: | N-Channel 50V 100mA (Ta) 150mW (Ta) Surface Mount ... |
| DataSheet: |  5HN01M-TL-H Datasheet/PDF |
| Quantity: | 1000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 50V |
| Current - Continuous Drain (Id) @ 25°C: | 100mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
| Rds On (Max) @ Id, Vgs: | 7.5 Ohm @ 50mA, 10V |
| Vgs(th) (Max) @ Id: | -- |
| Gate Charge (Qg) (Max) @ Vgs: | 1.4nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 6.2pF @ 10V |
| FET Feature: | -- |
| Power Dissipation (Max): | 150mW (Ta) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 3-MCP |
| Package / Case: | SC-70, SOT-323 |
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A 5HN01M-TL-H is a single insulated-gate field-effect transistor (FET). It is designed for surface mount applications and has a drain-source breakdown voltage up to 500V. This FET can be used to switch a wide range of operating voltages and has been found to be especially useful in high reliability environments due to its low thermal resistance and high power density.
The 5HN01M-TL-H is designed for surface mounting on a PCB, and it features a vias-free PCB and improved thermal characteristics. The main use of this FET is in power supply sections of the PCBs. Since it has a high breakdown voltage, it is capable of handling high currents and very low resistance. The internal impedance of the FET can be easily matched to the impedance of the PCB, making it suitable for high power applications.
The working principle of the 5HN01M-TL-H is based on its gate effect. When a voltage is applied on the gate, it produces an electric field between the gate and the drain. This electric field attracts or repels electrons depending on the polarity of the voltage applied. This in turn controls the current flow between the source and drain, thus allowing the FET to function as a switch.
The 5HN01M-TL-H is mostly used in power supply applications, as it can be used to control high voltages and currents in switching applications. It is also suitable for high reliability applications since it has a low thermal resistance and a high power density. Additionally, the FET is easy to solder onto the PCB and is widely available.
Overall, the 5HN01M-TL-H is a good choice for surface mount applications where high voltage and high current is needed. Its gate effect allows it to be used as a switch and its low thermal resistance and high power density make it suitable for high reliability applications. The FET is also easy to solder onto the PCB, making it widely available and easily used in various applications.
The specific data is subject to PDF, and the above content is for reference
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