5LN01C-TB-E Discrete Semiconductor Products |
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Allicdata Part #: | 5LN01C-TB-EOSTR-ND |
Manufacturer Part#: |
5LN01C-TB-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 50V 100MA 3CP |
More Detail: | N-Channel 50V 100mA (Ta) 250mW (Ta) Surface Mount ... |
DataSheet: | 5LN01C-TB-E Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 100mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4V |
Rds On (Max) @ Id, Vgs: | 7.8 Ohm @ 50mA, 4V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 1.57nC @ 10V |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 6.6pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 250mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 3-CP |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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The 5LN01C-TB-E is a single N-Channel Enhancement Mode MOSFET device from Toshiba Electronics Europe. This MOSFET device offers high performance in small package formats, which makes it an ideal choice for a range of consumer and industrial applications. This article provides an overview of the device\'s applications and working principles.
Applications –
The 5LN01C-TB-E is a particularly attractive option for lower power applications. It is frequently used in computer, consumer electronics and automotive applications including switching, drive circuits, battery protection and load switching. Other applications include power management in digital cameras, game consoles, smart phones and other mobile devices. It can also be used in DC/DC converters, home appliance controllers and industrial motor controls.
Working Principle –
The 5LN01C-TB-E utilizes MOSFET technology, which is an acronym for Metal Oxide Semiconductor Field Effect Transistor. It is an electrical switch allowing a circuit current to be switched on or off by applying a small voltage to a gate. MOSFETs are similar to JFETs, or junction field effect transistors, but use two P-N junctions as opposed to one N-channel and one P-channel.
The gate voltage can be either higher or lower than the source voltage depending on the desired action – either closing the switch (turning on the circuit) or opening the switch (turning off the circuit). If the gate voltage is lower than the source voltage, then the gate will pull the gate principle to a lower voltage, therefore closing the circuit. If the gate voltage is higher than the source voltage, then it will push the gate principle to a higher voltage, therefore opening the circuit.
The 5LN01C-TB-E has a high efficient on state, which reduces switching losses and can enable lower power consumption. It also has a low Ron resistance which improves system performance. These features make it a great option when superior performance, small size, and power efficiency are needed.
Conclusion –
The 5LN01C-TB-E single N-Channel Enhancement Mode MOSFET device from Toshiba offers high performance in a small package. Its features make it an ideal choice for a range of applications in the computer, consumer electronics, automotive and industrial markets. Its MOSFET technology allows it to be switched on or off by applying a small voltage to a gate and its efficient on state reduces switching losses.
The specific data is subject to PDF, and the above content is for reference
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