Allicdata Part #: | 5LN01M-TL-E-ND |
Manufacturer Part#: |
5LN01M-TL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 50V 0.1A |
More Detail: | N-Channel 50V 100mA (Ta) 150mW (Ta) Surface Mount ... |
DataSheet: | 5LN01M-TL-E Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 100mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4V |
Rds On (Max) @ Id, Vgs: | 7.8 Ohm @ 50mA, 4V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 1.57nC @ 10V |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 6.6pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 150mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 3-MCP |
Package / Case: | SC-70, SOT-323 |
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FETs (Field-effect transistors) and MOSFETs (MOS-gated field-effect transistors) are key components in many electronic devices. Among them, 5LN01M-TL-E stands out as a high-performance device, offering outstanding features and suitable for a wide range of different applications. This article will discuss the applications of 5LN01M-TL-E and its working principle.
The 5LN01M-TL-E is a type of MOSFET single, which means it contains three terminals that use a single MOSFET device to control or switch the current or voltage being applied to it. The three terminals of 5LN01M-TL-E are Source, Drain and Gate, each of which has its own specific purpose. The Source is where the current or voltage is applied, the Drain is from where the current or voltage exits, and the Gate is used to control the flow of current or voltage across the Source-Drain path.
The 5LN01M-TL-E is suitable for a variety of applications including power, analog, switching and logic. In power applications, the device can be used as a switch within a circuit to control the current or voltage flowing through it. In analog applications, the device can be used to convert signals in areas like radio amplifiers and analog-to-digital converters. In switching applications, the device can be used to switch between different circuits, while in logic applications the device can be used to create logic charts.
The working principle of 5LN01M-TL-E is based on the ability of the Gate terminal to control the current or voltage flowing through the Source-Drain path. When a voltage is applied to the Gate terminal, an electrostatic field is established between the Gate and the Source-Drain path, which then affects the resistance of the Source-Drain path. This effect is known as the ‘field-effect’, and can be used to control the amount of current or voltage flowing through the Source-Drain path.
The 5LN01M-TL-E can be used in a variety of applications because of its ability to effectively control the current or voltage flowing through a circuit. It is also made of high-quality materials, which ensures high reliability and durability, making it an ideal choice for many applications. In addition, the 5LN01M-TL-E is also quite small, making it suitable for use in smaller devices.
In conclusion, the 5LN01M-TL-E is a high-performance MOSFET single with effective field-effect control of current or voltage flow. It is suitable for a variety of applications including power, analog, switching and logic, and is made of high-quality materials, making it an ideal choice for many applications. Small size also makes the 5LN01M-TL-E ideal for use in smaller devices.
The specific data is subject to PDF, and the above content is for reference
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