7130LA35CB Allicdata Electronics
Allicdata Part #:

7130LA35CB-ND

Manufacturer Part#:

7130LA35CB

Price: $ 59.16
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 8K PARALLEL SB48
More Detail: SRAM - Dual Port, Asynchronous Memory IC 8Kb (1K x...
DataSheet: 7130LA35CB datasheet7130LA35CB Datasheet/PDF
Quantity: 1000
40 +: $ 53.78460
Stock 1000Can Ship Immediately
$ 59.16
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kb (1K x 8)
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 48-DIP (0.600", 15.24mm)
Supplier Device Package: 48-SIDE BRAZED
Description

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7130LA35CB is a type of memory device, whose application field and working principle will be discussed in this article.

Introduction

7130LA35CB is a type of semiconductor memory device, which is developed by Fujitsu. This device is made of bipolar transistors, which are connected with silicon integrated circuit components and isolation elements. It has high-density design by utilizing new packaging materials, making it suitable for use in various applications with high requirements for compact size and weight.

Application Field of 7130LA35CB

7130LA35CB is mainly adopted by embedded systems, since it is suited for controlling systems that require high performance, especially in wireless communication technology. This device is also adopted by industrial electronics and electric car applications, thanks to its ability to work in extreme conditions of high and low temperature, vibration resistance and acceleration.

In addition, 7130LA35CB is adopted by the automotive industry and consumer electronics industry, as it can store and process information quickly and accurately. Moreover, this device has been adopted by medical devices, such as digital stethoscopes and intelligent BP monitors, where it offers high performance in terms of safety, compatibility and efficacy.

Working Principle of 7130LA35CB

The 7130LA35CB works based on the MOSFET circuit principles. The main components used in the construction of the device include bipolar transistors and silicon integrated circuit elements. The transistors are used to control the current flow through the circuit, while the integrated circuit elements are used to store data. The device is capable of storing thousands of bytes in a very small area.

The major components of 7130LA35CB includes transistors, capacitors, resistors and diodes, which are connected to form the memory array. This device utilizes the principles of CMOS (Complementary Metal Oxide Semiconductor) to store data. The device works based on the concept of storing data in a row and column format. The data is stored in the memory chip with the help of a control unit, which is used to debug the logic associated with the memory array.

The 7130LA35CB is based on a bi-directional CMOS switch circuit, which is used to switch the memory cells “on” or “off”. This circuit is capable of transferring data between the memory array and the control unit with minimal power consumption. Furthermore, the device utilizes the concept of “self-timed” operation, which further reduces the overall power consumption of the device.

Conclusion

In conclusion, 7130LA35CB is a type of memory device developed by Fujitsu. It is mainly adopted by embedded systems, industrial electronics and electric car applications, due to its ability to work in extreme conditions. Additionally, it is also used for medical devices and consumer electronics. Working on the principles of CMOS and bi-directional switch circuit, this device is capable of storing and processing data with minimal power consumption.

The specific data is subject to PDF, and the above content is for reference

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