Memory

7130LA35TF8 is a part of memory series and can be used in specific applications. It is a static random access memory (SRAM) device and its block diagram is described in Fig. 1. This article will describe the application field, working principle and structure of 7130LA35TF8.

Application Field

7130LA35TF8 is widely used in special application fields such as medical, telecom, security and testing. It is also especially suitable to implement distributed memory in embedded systems, FPGA, ASIC and CPLD design. For example, in the security system, the random access memory can store data of behaviour record and anti-theft alarm. In the medical system, it is used to continuously monitor and store health indicators of patients. The FPGA design can benefit from it due to its high speed and reliability.

Working Principle

The activity of 7130LA35TF8 follows the principle of static memory. Static memory refers to the memory device whose contents are not actively erased or rewritten and can be maintained for a long period of time without power. The static RAM device is a cell array composed of two MOSFETs and one capacitor. The two MOSFETs play the role of transistor switch, and the capacitor is used to store the bit state. The charge of the capacitor can represent binary 0 or 1. When the voltage exceeds the threshold value of the cell, the bit stored therein is interpreted as 0; otherwise, it is interpreted as 1.

Structure

The structure of 7130LA35TF8 is as shown in Fig. 2. It consists of eight core blocks including decoders, data registers, I/O logic, output buffer and sense amplifier, address latch enable (ALE) logic, row address strobe (RAS) logic, address multiplexer and data storage. The data storage is the core memory unit of the device, which is implemented by 8192 cells. The data register generates high and low signals from the data input IO port in 8192 cycles to write data into the memory array. The sense amplifier amplifies the signal from the fragment in the data array. Then the data is amplified by the buffer and output to the data output IO port. The I/O logic processes 8192 input/output control signals that magnetize or release the data in the data storage. The remaining units are devoted to the address input and address decode. In summary, 7130LA35TF8 combines interface logic, address latch enable logic, row address strobe logic, data register, data storage, sense amplifier and output buffer together, which is a complete static random access memory.

Conclusion

7130LA35TF8 is a static random access memory (SRAM) device, which is suitable for various application fields, such as medical, telecom, security and testing. It is especially suitable for implementing distributed memory in embedded systems, FPGA, ASIC and CPLD design. Its working principle is based on the static memory principle, and its structure includes 8 core blocks. The combination of these core blocks makes up a complete static random access memory.