7130SA55TFI8/2703 Allicdata Electronics
Allicdata Part #:

7130SA55TFI8/2703-ND

Manufacturer Part#:

7130SA55TFI8/2703

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 8K PARALLEL 64TQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 8Kb (1K x...
DataSheet: 7130SA55TFI8/2703 datasheet7130SA55TFI8/2703 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kb (1K x 8)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (10x10)
Description

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Memory technology is one of the most important aspects of technological advancement. As the power of computers and the demand for data storage increase, memory technology is becoming an increasingly important part of modern computing. The 7130SA55TFI8/2703 is an example of a type of memory technology that has many applications. In this article, we will examine the application field and working principle of the 7130SA55TFI8/2703.

The 7130SA55TFI8/2703 is a type of Random Access Memory (RAM) that is designed for use in high-speed data-processing applications. The device utilizes an array of dynamic RAM (DRAM) cells to store data and instructions, and a multi-level memory hierarchy to provide faster access and retrieval of information than is possible with DRAM. This type of RAM is typically used in digital signal processors (DSPs) and embedded systems, where high speed and low power consumption are critical requirements.

The 7130SA55TFI8/2703 has several advantages over other memory technologies. First, it is capable of higher data read and write speeds than even the fastest DRAMs. This means faster data processing and improved system performance. Additionally, the 7130SA55TFI8/2703 offers low power consumption, which is critical in embedded systems and other applications where power consumption is a concern. Finally, the device offers built-in error correction and ECC support, which increases system reliability and data integrity.

The 7130SA55TFI8/2703 works by utilizing multiple levels of memory hierarchy. At the bottom of the hierarchy is the DRAM cell array, which stores data and instructions. Above this is a set of memory blocks, each of which contains a pair of dual-ported SRAMs that act as buffers to improve the speed of access to the DRAM cell array. Finally, a control unit is used to facilitate access to the data in the DRAM cell array, and to control the flow of data through the memory hierarchy.

The 7130SA55TFI8/2703 provides significant advantages over other memory technologies. Its high speed and low power consumption make it ideal for use in embedded systems and other high-performance applications. Additionally, its built-in error correction and ECC support ensure that the memory is reliable and data is secure. The 7130SA55TFI8/2703 is an excellent choice for those looking for fast, reliable memory technology.

The specific data is subject to PDF, and the above content is for reference

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