7130SA55J8/C Allicdata Electronics
Allicdata Part #:

7130SA55J8/C-ND

Manufacturer Part#:

7130SA55J8/C

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 8K PARALLEL 52PLCC
More Detail: SRAM - Dual Port, Asynchronous Memory IC 8Kb (1K x...
DataSheet: 7130SA55J8/C datasheet7130SA55J8/C Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kb (1K x 8)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-LCC (J-Lead)
Supplier Device Package: 52-PLCC (19.13x19.13)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is an essential component of the majority of modern electronics, powering the storage and retrieval of data. The 7130SA55J8/C memory is a high-density semiconductor chip designed to provide a powerful and reliable alternative to traditional memory solutions. This article will explore the 7130SA55J8/C\'s application field and working principle.

The 7130SA55J8/C is a type of nonvolatile memory known as Flash. Nonvolatile memory retains its data when powered down, making it very useful for certain applications. The 7130SA55J8/C is commonly used in digital audio players and other portable devices where data needs to be securely stored even when the device is not in use. It is especially popular for providing data storage and retrieval in mobile phones, tablets, and other handheld devices.

The 7130SA55J8/C utilizes multiple bit-cell memory cells arranged in an array with integrated self-timed write control. This allows it to operate without any external components, greatly simplifying the design phase. The memory array itself is organized into groups of columns and rows known as pages. Each page contains 512 bytes of data and utilizes an over-the-cell structure to minimize area. The chip also supports various types of operations, including read, write, and erase functions.

The 7130SA55J8/C offers impressive performance thanks to its array architecture and logic circuit design. It can sustain write speeds of up to 20MB/s, making it a great choice for applications that need fast write access. It also features random write protection to guarantee the integrity of data stored in the array and data can be read back at very fast speeds. Write protections, such as write verify and write protect overhead, have also been incorporated to ensure data integrity.

In addition to its impressive performance, the 7130SA55J8/C also has impressive power-saving credentials. The chip works on a three-stage standby system, which reduces the power consumption significantly while still guaranteeing speedy read and write times. It also utilizes a low Vcc of 1.65V, ensuring reliable operation even in low-power environments. Overall, the 7130SA55J8/C provides an impressive balance of power saving, complex operation flexibility, and high performance.

In summary, the 7130SA55J8/C is a high-performance, non-volatile memory chip designed to provide reliable storage and retrieval in a wide range of applications. Its powerful array architecture and logic circuit design yield impressive write and read speeds, making it an ideal choice for demanding applications such as digital audio players, tablets, and other portable devices. Its power-saving credentials and robust design make it an ideal solution for both low-power and high-performance environments.

The specific data is subject to PDF, and the above content is for reference

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