
Allicdata Part #: | A2I22D050NR1-ND |
Manufacturer Part#: |
A2I22D050NR1 |
Price: | $ 26.85 |
Product Category: | RF/IF and RFID |
Manufacturer: | NXP USA Inc |
Short Description: | IC RF LDMOS AMP 15TO270 |
More Detail: | RF Amplifier IC W-CDMA 1.8GHz ~ 2.2GHz TO-270WB-15 |
DataSheet: | ![]() |
Quantity: | 1000 |
500 +: | $ 24.40840 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Frequency: | 1.8GHz ~ 2.2GHz |
P1dB: | 16.5dBm |
Gain: | 34dB |
Noise Figure: | -- |
RF Type: | W-CDMA |
Voltage - Supply: | 24 V ~ 32 V |
Current - Supply: | 520mA |
Test Frequency: | 1.8GHz |
Package / Case: | TO-270-15 Variant, Flat Leads |
Supplier Device Package: | TO-270WB-15 |
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RF amplifiers are the devices used to increase the power of the RF signal. The A2I22D050NR1 is a type of RF amplifier for increasing the signal frequency for communications and other applications. This device operates with a wide dynamic range and is suitable for use in a variety of applications.
Application Field of A2I22D050NR1
The A2I22D050NR1 is a wideband RF amplifier designed for telecommunication and audio applications. It amplifies broadband frequency signals up to a maximum of 18 GHz and delivers a maximum power of 24 dBm. This allows for an increase in transmission of a considerable amount of data without significant harm to the signal integrity. The A2I22D050NR1 amplifier is also used in radar applications, satellite communications, aerospace and defense, unmanned aerial vehicles (UAVs), and other high frequency signal applications. It offers very linear gain and high linearity across its band of operation from 0.3 to 18 GHz, making it suitable for use in wireless systems, including 5G, 4G and 2G communication systems. This RF amplifier is also used in consumer electronic devices, microwave ovens, medical equipment, and telemetry systems.
Working Principle of A2I22D050NR1
The A2I22D050NR1 can amplify RF signals by using two types of circuitry – a differential low noise amplifier (LNA) and a 12 dB gain block. Both components are comprised of multiple FET devices both before and after the input and output ports. The FET devices used in the amplifiers are matched with each other to ensure optimal performance and linearity. The input ports of both the LNA and the gain block are connected to an input signal source. These signals are then amplified as they pass through the amplifier stages. The output of the amplifier is thus the result of adding the amplified signals from both the LNA and gain block. This device is capable of offering a gain of up to 16 dB with a noise figure of up to 4.5 dB. The input and output ports of the amplifier are designed to operate in a wide range of supply voltages between 3 and 12 V.
The A2I22D050NR1 is a highly reliable and efficient RF amplifier and can be used for a variety of applications. It offers good linearity, low distortion, and low noise figure, making it ideal for applications requiring high signal fidelity and data rates. This amplifier is also designed to handle a wide range of input power levels making it suitable for a variety of applications, including wireless communications and radar systems. Its wide range of features makes it a suitable choice for a wide range of applications.
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