A2I20H060GNR1

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The A2I20H060GNR1 is a transistor type suitable for use in Radio Frequency (RF) applications. It is an N-Channel Enhancement Mode Field-Effect Transistor (FET). The device is constructed in a single, plastic package and is ideal for use in RF amplifier and switched circuitry where typical Power Added Efficiency (PAE) is required.

The A2I20H060GNR1 has a VDSS operating voltage of 60V, a RDS(on) current of 20Ω, as well as a Drain-Source breakdown voltage of up to 200V. The device also has a low gate charge, allowing for efficient operation in switched-mode power supplies and other power-restricted applications. The device also has a low on-resistance per area, allowing for very high circuit current density.

In order to use the A2I20H060GNR1, the gate bias voltage is applied to the gate terminal, thus creating an inversion layer in the channel between the source and drain. This creates a current flow between the source and drain, thus allowing current to flow from source to drain. Additionally, the inversion layer enables very fast switching times, allowing for very efficient operation of the device.

The A2I20H060GNR1 is suitable for a variety of applications including: mobile phones, tablets, broadband devices, consumer electronics, audio amplifiers, rf modulators and switching power supplies. The device is ideal for use in RF circuits, as the low RDS(on) current enables low noise operation, as well as low power dissipation. It is also suitable for use in switched-mode power supplies, where the high speed switching times can help to reduce power losses.

Overall, the A2I20H060GNR1 is a high performance, low power, N-Channel Enhancement Mode Field-Effect Transistor, suitable for use in RF applications. The device is constructed in a single package and features a low gate charge and a low RDS(on) current. The transistor is ideal for use in RF circuits, where its fast switching times and low power dissipation can help to reduce power losses. Additionally, the device is suitable for use in a variety of applications, including mobile phones, tablets, broadband devices, consumer electronics, audio amplifiers and rf modulators.

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