A2I25D025GNR1

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Field-effect transistors (FETs) are commonly used for radio frequency (RF) applications due to their fast switching capability, low power requirements, and radiation hardening capability. The A2I25D025GNR1 is an RF-capable FET that is optimized for high-power, high-frequency applications. This article will detail the A2I25D025GNR1’s application fields, working principles, and design specifications.

Application Field

The A2I25D025GNR1 is a high power N-channel FET optimized for RF applications. It is suitable for use in high-power RF power amplifier circuits, including switch-mode power supplies (SMPS) and pulse width modulation (PWM) designs.

The A2I25D025GNR1 is designed for use in RF applications with frequencies from 1 GHz to 2.5 GHz. This device is suitable for use in applications such as automotive infotainment systems, 802.11 ac/ax routers, Wi-Fi access points, mobile phones, and satellite communication systems.

Working Principle

The A2I25D025GNR1 is an N-channel FET that works on the principle of the FET field effect. When a small electric field is applied to the gate of the FET, it creates a depletion region in the channel that controls the current flow from the source to the drain. This allows for precise current control and high frequency switching.

The FET is designed with a low-resistive drain-source path, which helps reduce power loss and allows for higher power circuit operation. The A2I25D025GNR1 has an effective FET gate capacitance of 0.25pF for superior RF performance. It also has a drain-source on-resistance of 25 Ohms, making it ideal for high-power, high-frequency applications.

Design Specifications

The A2I25D025GNR1’s design specifications include a maximum drain voltage of 25 VDC, a gate-source voltage of 10 VDC, a total gate charge of 10 nC, a drain-source leakage current of 1.0 mA, a maximum power dissipation of 1W, and a maximum operating temperature of 85°C.

The A2I25D025GNR1 is RoHS compliant and is available in the industry standard 8-Lead SLP package. This allows for easy and reliable mounting and replacement.

Conclusion

The A2I25D025GNR1 is a specialized FET designed for high-power, high-frequency RF applications. It is ideal for use in automotive infotainment systems, 802.11 ac/ax routers, Wi-Fi access points, mobile phones, and satellite communication systems. Its design specifications, including a low-resistive drain-source path, a high-performance gate capacitance, and a low drain-source on-resistance, make the A2I25D025GNR1 an excellent choice for high-power, high-frequency RF circuit designs.

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