A2I20H060NR1

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A2I20H060NR1 is a high current MOSFET with unique application fields and related working principles.

General Introduction

The A2I20H060NR1 is a current rating of 120A, voltage rating of 20V, resistor gate type, advanced power switch designed for use in remote switching, high frequency applications and high-power devices. It provides low on-resistance characteristics and delivers high-speed switching performance for low-loss operations. The A2I20H060NR1 also offers high-speed switching with low-switching losses, durability, and reliability.

Application Field and Working Principle

The A2I20H060NR1 device has very wide application fields which including AC/DC converters, switched mode power supplies, motor control and microprocessors based appliances. The A2I20H060NR1 working principle of the device is based on the MOSFET electrical characteristics. It works by transferring the control voltage applied to its input gate to one or both of the other terminals. When the control voltage is at a certain level, then the resistance in the device will become very low, allowing current to flow and the device will be switched on.

A2I20H060NR1 MOSFETs are ideal for high frequency and RF applications because they have low parasitic capacitance and high switching speed. The device is especially suitable for high efficiency and high current applications such as mobile phone, DSL, optical networks and DC-DC converter applications. The A2I20H060NR1 device has very low on-resistance values and exhibits excellent thermal characteristics, making it suitable for continuous run through applications.

Advantages

The A2I20H060NR1 device has high current, voltage and thermal ratings allowing for a wide range of applications and higher performance levels than other MOSFETs. Its very low on-resistance and excellent thermal characteristics make it particularly well suited for high efficiency and high current applications. The device also offers very low switching losses, low EMI and higher reliability compared to other MOSFETs.

The A2I20H060NR1 device features a P-channel FET, which has a Source terminal connected to the drain of the N-channel FET. The combined P-channel and N-channel FETs make the device ideal for high frequency switching which requires high-side on-off control. The device also functions over the full temperature range of -55° to + 175°C.

Conclusion

The A2I20H060NR1 is a versatile and reliable MOSFET with wide application fields and a good combination of performance and reliability. It is particularly suited for high current and high frequency applications, and its P-channel FET allows for high-side on-off control. The device also exhibits excellent thermal characteristics allowing for continuous run-through operation.

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