Allicdata Part #: | ALD212908ASAL-ND |
Manufacturer Part#: |
ALD212908ASAL |
Price: | $ 2.65 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Advanced Linear Devices Inc. |
Short Description: | MOSFET 2N-CH 10.6V 0.08A 8SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V... |
DataSheet: | ALD212908ASAL Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 2.41265 |
Series: | EPAD®, Zero Threshold™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Matched Pair |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 10.6V |
Current - Continuous Drain (Id) @ 25°C: | 80mA |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | 20mV @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 500mW |
Operating Temperature: | 0°C ~ 70°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
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The ALD212908ASAL is part of a series of integrated semiconductor chips (ICs) that are used as Field Effect Transistors (FETs), or a Metal-oxide Semiconductor Field Effect Transistor (MOSFET). The ALD212908ASAL is a technology with a large array of closely spaced MOSFET devices.
The ALD212908ASAL is designed to provide increased output current as well as improved electric field control and should be used in modern designs that require high performance power conversion. It has been optimized for applications that require switching from low current to high current, in particular those with a high density of transistors such as those used in the automotive, computing, telecom and industrial markets.
The working principle of the ALD212908ASAL is based on the use of FETs, which are able to modulate signals in an electrical circuit. FETs are semiconductor devices that can operate either in saturation or in depletion mode. In saturation mode, a voltage is applied to the gate of the FET and the current in the drain increases. In depletion mode, the gate voltage decreases and the current through the drain decreases.
The ALD212908ASAL utilizes FETs in an array to maximize the switching ability of the ICs. The main components of the ALD212908ASAL are an array of FETs, which are arranged in a lattice configuration and a power MOSFET control device. The power control device is used to control the switching of each of the FETs in the array. The FETs are individually controlled by the power MOSFET control device and gate drivers, which allow for the output voltage and current modulation.
The ALD212908ASAL can be used in various applications, such as power supply regulation, load regulation, motor control, battery management and more. The ALD212908ASAL has a wide operating range and is highly reliable, making it ideal for high-performance applications. Additionally, the power control of the FETs allows for a low switching loss.
Overall, the ALD212908ASAL is a high-performance integrated device that offers powerful switching and high-efficiency power conversion. It can be used in a wide range of applications, from power supply regulation to battery management. This makes the ALD212908ASAL an ideal solution for applications that require high-performance power conversion.
The specific data is subject to PDF, and the above content is for reference
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