Allicdata Part #: | ALD212914SAL-ND |
Manufacturer Part#: |
ALD212914SAL |
Price: | $ 2.28 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Advanced Linear Devices Inc. |
Short Description: | MOSFET 2N-CH 10.6V 0.08A 8SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V... |
DataSheet: | ALD212914SAL Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 2.07031 |
Series: | EPAD®, Zero Threshold™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Matched Pair |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 10.6V |
Current - Continuous Drain (Id) @ 25°C: | 80mA |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | 20mV @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 500mW |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
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The ALD212914SAL is an advanced semiconductor device developed by the Global Advanced Semiconductor (GAS) Corporation. It is a complimentary MOSFET array with a variety of features and applications. This device is ideal for automotive, industrial and consumer electronics markets, due to its versatility and wide operating range.
An ALD212914SAL is made up of a single chip construction that is divided into an array of four (4) field effect transistors, commonly referred to as FETs. This device features four (4) N-channel MOSFETs which are each capable of carrying an average current load of 10A. The total gate source voltage is limited to 20V and the total drainSource voltage rating of this device is up to 80V. This multi-channel MOSFET array has a high power switching capability along with low static power consumption. Additionally, the on-resistance of this array is extremely low, allowing for greater efficiency and energy savings.
The working principle of the ALD212914SAL is based on the concept of field effect transistors (FETs). FETs are voltage and current driven devices that utilize the majority carriers, electrons and holes, in order to control the current flow between their drains and sources. As their gate voltage is increased, more carriers will move from the source to the drain, thus increasing the current in the circuit. Conversely, when the gate voltage is decreased, more carriers will move from the drain to the source, thus reducing the current in the circuit. The ALD212914SAL uses N-type MOSFETs as its active device, with its gate connected to the drain, providing excellent conductivity and low on-resistance to minimize power loss and reduce EMI noise.
The ALD212914SAL can be used in a variety of automotive and industrial applications. Due to its high power handling, this device is well suited for switching loads in high power automotive and industrial models such as forklift trucks, electric vehicles and cranes. It can also be used for precision current settings and linear operation, such as in industrial motor controllers and air conditioners. Additionally, due to its low power consumption, this device can be used for energy-saving applications like in home appliances, lighting systems, energy-saving lighting and home security systems.
The ALD212914SAL is an advanced MOSFET array that is well suited for a range of automotive, industrial and consumer electronics applications. Its four (4) N-channel structure, its on-resistance and high power handling capabilities, combined with its low power consumption give this device the versatility to be used in a variety of environments. Thanks to its wide operating range and low cost, the ALD212914SAL is an ideal option for any application where a high power and efficient MOSFET array is desired.
The specific data is subject to PDF, and the above content is for reference
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