AOD9N50 Allicdata Electronics
Allicdata Part #:

785-1485-2-ND

Manufacturer Part#:

AOD9N50

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 500V 9A TO252
More Detail: N-Channel 500V 9A (Tc) 178W (Tc) Surface Mount TO-...
DataSheet: AOD9N50 datasheetAOD9N50 Datasheet/PDF
Quantity: 2500
Stock 2500Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 178W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 860 mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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AOD9N50 is a type of Field Effect Transistor (FET), which utilizes Metal Oxide Semiconductor (MOS) technology as its main structure. It is also known as a Single-gate MOSFET, as it comes with a single gate which controls the flow of electrons through the channel. This FET has a wide variety of applications in the fields of electronics, engineering, and other disciplines.

In terms of working principle, a FET works by the application of voltage to the gate of the transistor. Applying a negative voltage creates a strong electric field in the gate, which attracts and repels electrons in the channel, thus controlling the electron flow across the channel. AOD9N50 follows this same principle, using the electric field generated by the negative voltage to control the electron flow in its channel.

The AOD9N50 is a popular MOSFET option because it provides low drain-source on-resistance along with low gate threshold voltage. It also has an impressive high-temperature endurance, with a maximum operating temperature of 150°C. This makes it suitable for a number of specific applications. For example, it is often used in power supplies, DC-DC converters, and other power management applications.

In addition to power applications, the AOD9N50 is also often used in radiofrequency (RF) applications such as wireless charging, transceivers, and high frequency amplifiers. The device operates at high frequencies due to its low gate threshold voltage, allowing it to achieve high efficiency in RF circuits. It has even been used in space-based applications, where its temperature tolerance and high frequency performance makes it an attractive choice for making RF switches.

Overall, the AOD9N50 is a versatile and dependable FET that can be used in a range of applications from power management to RF applications. Its low drain-source and gate threshold voltage, combined with its high-temperature tolerance, makes it a reliable and robust device for any circuit.

The specific data is subject to PDF, and the above content is for reference

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