| Allicdata Part #: | AOI516_001-ND |
| Manufacturer Part#: |
AOI516_001 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH 30V 18A |
| More Detail: | N-Channel 30V 18A (Ta), 46A (Tc) 2.5W (Ta), 50W (T... |
| DataSheet: |  AOI516_001 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
| Package / Case: | TO-251-3 Stub Leads, IPak |
| Supplier Device Package: | TO-251B |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 50W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1229pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 5 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 18A (Ta), 46A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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AOI516_001 is a single n-channel enhancement-mode MOSFET transistor, which is suitable for use in a wide variety of applications. It is typically used in low-noise and medium- to high-current switching circuits, battery protection circuits, and low-frequency amplifiers. It has a breakdown voltage of 3V, which makes it suitable for use in portable electronic applications.
The working principle of the AOI516_001 is based on the MOSFET transistor. The MOSFET is an insulated gate field-effect transistor that operates by using a voltage on the insulated gate to control the conductivity of the channel between source and drain. It can be used in both an enhancement and depletion mode and is often used in amplifier and switching applications.
In an enhancement-mode MOSFET, such as the AOI516_001, the channel between source and drain has a zero conductivity at zero gate voltage. In this case, when a voltage is applied to the gate terminal, a reverse-biased depletion layer forms around it, allowing the channel to conduct current. This current increases proportional to the gate voltage, allowing it to be used as an amplifier or a switch.
The AOI516_001 is a MOSFET transistor that is ideal for use in low-noise, low-current switching and amplifier applications. It has a high-performance breakdown voltage of 3V, which makes it suitable for use in portable electronic applications. Furthermore, it is well suited for use in high-power applications, such as motor control and battery protection circuits. It is also an excellent choice for use in low-frequency amplifier applications.
The AOI516_001 is a single n-channel enhancement-mode MOSFET transistor that is used in a wide variety of applications. It is ideal for low-noise and medium- to high-current switching circuits, battery protection circuits, and low-frequency amplifier applications. It has a high-performance breakdown voltage of 3V, making it suitable for use in portable electronic applications. Furthermore, it is well suited for use in high-power applications, such as motor control and battery protection circuits.
The specific data is subject to PDF, and the above content is for reference
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