
Allicdata Part #: | 785-1649-5-ND |
Manufacturer Part#: |
AOI530 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 30V 70A TO-251 |
More Detail: | N-Channel 30V 23A (Ta), 70A (Tc) 2.5W (Ta), 83W (T... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | TO-251-3 Stub Leads, IPak |
Supplier Device Package: | TO-251A |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3130pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 62nC @ 10V |
Series: | AlphaMOS |
Rds On (Max) @ Id, Vgs: | 2.7 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Ta), 70A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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AOI530 is an advanced insulated gate bipolar transistor (IGBT) module, developed by Mitsubishi Electric Corporation. It is a high power device with a wide operating temperature range of -40°C to +85°C. It is designed for applications such as motor control, power rectification, or any high-power switching applications.
AOI530 Application Fields
AOI530 IGBT module can be used in various high-power applications, such as motor control, power rectification, or any high-power switching applications. It is suitable for power switching duties in a variety of system types, such as Motor Power Drive, Uninterruptible Power System (UPs), Vehicle Engineering Systems, Solar Power Generation System, and Industrial Applications. It can also be used for high-temperature working environment.
AOI530 Working Principle
AOI530 adopts a novel, vertical IGBT structure, connecting the base and the collector at the same time. This principle makes the device have the characteristics of fast switching speed, high voltage withstand and low on-resistance. The device consists of an electric field plate connected to the base, which is separated from the collector by a thin oxide layer. When a current is applied to the field plate, it exerts an electric field on the oxide layer, which induces a current in the collector. The magnitude of the current is proportional to the field strength.
The device operates between two states. When the current is in the off state, no current flows through the collector and the device is turned off. When the current is in the on state, a large current flows through the collector and the device is turned on. This principle is used to control a wide range of variables, such as controlling the speed of a motor, operating a high power switching device, or controlling the output power of a vehicle engineering system.
AOI530 IGBT module can offer high efficiency, high performance, and long-term reliability in the most demanding applications. It is suitable for use in a variety of system types, such as automotive, factory automation, medical equipment, or military systems. It is also capable of withstanding high temperatures, ensuring reliable operation even at extreme conditions.
The specific data is subject to PDF, and the above content is for reference
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