AON5802A Discrete Semiconductor Products

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AON5802A Application Field and Working Principle

The AON5802A is an N-Channel MOSFET Array that is part of a family of 26V integrated circuit (IC) signal switches designed for low-voltage system applications. It is an array of four N-Channel MOSFETS, enabling smaller signal switch designs with superior signal switching performance. The AON5802A is suitable for use in switching DC/DC converter systems, automotive applications, pulse signal input and output systems, microprocessor-controlled systems and other low-voltage signal switching applications.

The AON5802A is a CMOS-based device with strong ultraviolet (UV) light immunity and low on-resistance performance. Its four output channels can be individually controlled to achieve switching between analog and digital signals in complex applications. It is optimized for demanding high-side and low-side switching applications with fast switching performance and excellent EMC performance. It also provides drivers for external power resistor devices, which in turn can be connected to a processor or external drivers for effective load switching.

The AON5802A achieves low operating voltage range of 4.5V to 26V, and its operating temperature range is -40°C to 125°C. It is AEC-Q100 certified, making it suitable for automotive applications. Additionally, the device has an integrated charge pump and under voltage lockout (UVLO) circuit that prevents device damage due to overvoltage conditions.

In terms of structure, the AON5802A is made up of two N-Channel MOSFETS, each with a small-area, low-resistance N-Channel silicon-on-insulator (SOI) MOSFET-based process. An embedded ceramic substrate construction provides excellent thermal and electrical performance. The device is also equipped with a high-speed, low-power integrated switch control logic to enable high-speed switching operations.

In terms of working principle, the AON5802A uses an external voltage to turn on and off the devices in a logic "high" or "low" state. When an input voltage is applied, an internal gate drive circuit is activated to control the gate of the MOSFET devices, thus enabling the device’s internal switch. The device also provides an integrated charge pump and failsafe circuit to protect against accidental device damage due to system overvoltage conditions.

Overall, the AON5802A is an ideal solution for low-voltage, high-side and low-side signal switching applications due to its low on-resistance performance and extended operating temperature range. Its small size, integration of charge pump and UVLO circuits, and superior signal switching performance make it well suited for automotive, consumer electronics, industrial and medical applications.

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