AON5802B

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AON5802B is a dual-channel, fast switching low power n-channel MOSFET array, designed to reduce power loss, save board space and improve reliability. The device includes two n-channel MOSFETs that are connected in parallel and configured as a single-pole double-throw (SPDT) switch. Each MOSFET is capable of switching up to 5A of load current in the four main quadrants of the Vgs-Id plane.

The AON5802B is an ideal choice for high power applications that require low on resistance and fast switching, such as battery management, DC-DC Converters, load switches, POL converters, and low voltage power supplies. The device is optimized for low voltage operation, with a maximum 4.5V gate-source rating and a low on resistance of 0.03 – 0.19 Ohms. The small size and low voltage operation makes the AON5802B the perfect choice for power applications in portable, small form factor designs.

The AON5802B is designed to be easy to use, with no external components required. The device features a high speed logic-level signal control, which enables the MOSFETs to be switched on or off in less than 1 microsecond. Additionally, the device features short circuit and over temperature protection, making it the perfect choice for applications that require robustness and reliability. Furthermore, the AON5802B is RoHS compliant, with both lead (Pb) and halogen (Br) free construction.

The internal circuit of the AON5802B consists of two identical n-channel enhancement mode power MOSFETs. The power MOSFETs feature an enhanced version of the traditional vertical DMOS structure. This structure increases the on-resistance of the MOSFET by providing higher current carrying capacity. The vertical DMOS also maximizes the cost-to-performance ratio, making it an ideal choice for medium power switching applications.

The AON5802B has a built-in sense resistor that regulates the current during switching and adjusts the gate current. This sense resistor also keeps the voltage across the gate-source of the MOSFET low and improves the immunity of the device to over voltage stress. Additionally, the sensing resistor also helps to minimize the current consumption of the device when it is in idle state. Furthermore, the device also has an advanced ESD protection that helps to protect the AON5802B from over voltage and high frequency transient noise.

In conclusion, the AON5802B is an ideal choice for applications that require low on resistance, simple connections, high speed switching and robustness. With its small size and low voltage operation, the AON5802B is an ideal device for power applications in portable and small form factor designs.

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