AON5820_101

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
FET Type:	2 N-Channel (Dual) Common Drain
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	10A
Rds On (Max) @ Id, Vgs:	9.5 mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	1510pF @ 10V
Power - Max:	1.7W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-SMD, Flat Lead Exposed Pad
Supplier Device Package:	6-DFN-EP (2x5)

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The AON5820_101, a type of transistor array, is most commonly used for high speed switching applications because its low operating current, low capacitance, and minimal Gate charge make it an excellent choice for circuit designers. The AON5820_101 is a type of field effect transistor (FET) known as a metal-oxide-semiconductor field-effect transistor (MOSFET). The AON5820_101 is a type of power MOSFET array, which consists of three FETs, typically operating in a trio of complementary configurations. It has a low conduction threshold voltage (V_TH) that allows it to be used in a variety of logic applications.The AON5820_101 is uniquely designed to offer enhanced performance in both logic applications and power applications. Its low Q_g allows it to have high switching speeds, thus making it ideal for high frequency circuits. It also offers a low R_DSON, meaning that the FETs have low on-resistance and remain relatively cooler throughout its operation. Furthermore, the low gate charge (Q_G) of the AON5820_101 allows for fast switching, large drive currents, and low noise.In terms of its general application fields, the AON5820_101 is commonly used as a switch or switch/driver in a variety of high-frequency applications such as DC-DC converters and amplifiers, as well as communications, consumer, and power systems. The AON5820_101 can also be used to drive LEDs. As a switch, the FET is ideal for a variety of power applications because it is able to turn on and off rapidly. In addition, the array\'s low capacitance and low gate charge enable designers to achieve faster signals in their circuits.In terms of its working principle, the AON5820_101 works as follows. When a voltage is applied to the gate, it allows current to flow through the channel and from the source to the drain. This current is used to control the load devices connected to the drain (or load). The amount of current that is allowed to flow is controlled by the voltage applied to the gate. When the voltage applied to the gate is lowered, the current decrease, and when the voltage is increased, the current increases.The maximum drain-source voltage (V_DSS) of the AON5820_101 is 60V, with a drain of current up to 32A. This allows it to handle larger loads and higher power requirements. In addition, its low breakdown voltage allows it to handle higher frequencies without risking damage to the transistor array.Overall, the AON5820_101 is an excellent choice for high speed switching applications because of its low operating current, low capacitance, and minimal gate charge. It is commonly used as a switch or a switch/driver in a variety of high-frequency applications, such as DC-DC converters, amplifiers, communications, consumer, and power systems. Furthermore, its low breakdown voltage allows it to handle higher frequencies without risking damage to the transistor array.

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