Allicdata Part #: | AON5810-ND |
Manufacturer Part#: |
AON5810 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET 2N-CH 20V 7.7A 6DFN |
More Detail: | Mosfet Array 2 N-Channel (Dual) Common Drain 20V 7... |
DataSheet: | AON5810 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) Common Drain |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 7.7A |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 7.7A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 13.1nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1360pF @ 10V |
Power - Max: | 1.6W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-SMD, Flat Lead Exposed Pad |
Supplier Device Package: | 6-DFN-EP (2x5) |
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The AON5810 is a general-purpose application field and working principle array used in numerous applications. It consists of 10 transistors in four different families. These four families are: MOSFETs, JFETs, Darlington transistors, and PNP transistors. Each family has a unique set of features that makes it suitable for specific applications.
The MOSFETs in the AON5810 are used to amplify and switch high-speed signals, as well as for power management and control.
The JFETs in the AON5810 are used for high frequency noise filtering, temperature-stable biasing, and current-limiting. They are also used for high input impedance amplifiers and transducers.
The Darlington transistors in the AON5810 are used for high-power switching applications, as well as for providing protection from overvoltage and overcurrent.
The PNP transistors in the AON5810 are used for voltage level shifting, as well as for switching low-level signals over a wide voltage range.
The working principle of the AON5810 is based on the concept of an array. The array is divided into four "domains", each containing one of the four transistor families. Each domain is independent and can operate independently from the others, making them useful for a variety of different applications.
The way the AON5810 works is based on the charge-distribution system. This system works by having each of the transistors in the array donate electrons (positive charge) to the nodes that make up the array. This charge donation creates a potential difference between the nodes, which is referred to as the "Diode Forward Voltage". The Diode Forward Voltage is used to determine the voltage at which the transistor will switch between the "on" and "off" states.
When the Diode Forward Voltage is below the junction threshold voltage (Vjt), the transistor will be off, or non-conducting. When the Diode Forward Voltage is above the junction threshold (Vjt), the transistor will be on, or conducting. When all the transistors in the array are on, the resulting voltage drop across the array will be the Diode Forward Voltage. This voltage drop is used to control the output of the circuit.
The AON5810 is used in a variety of applications, such as power supplies, battery chargers, amplifiers, timers, light dimmers, overvoltage and overcurrent protection, level shifting, and more. The application possibilities for the AON5810 are virtually limitless, due to its wide range of features, low cost, and flexibility.
The specific data is subject to PDF, and the above content is for reference
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