Allicdata Part #: | 785-1174-5-ND |
Manufacturer Part#: |
AOT3N50 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 500V 3A TO-220 |
More Detail: | N-Channel 500V 3A (Tc) 74W (Tc) Through Hole TO-22... |
DataSheet: | AOT3N50 Datasheet/PDF |
Quantity: | 80 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 74W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 331pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 8nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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AOT3N50 is a popular organic field-effect transistor (OFET) used in many applications today. It is composed of three state elements (source, drain and gate) sandwiching a ulta-thin silicon oxide layer and is often used in analog circuits or high voltage switching. In this paper, we will discuss the various applications and working principles of AOT3N50.
First, let’s talk about the various applications of the AOT3N50. When used in analog circuits, the AOT3N50 can provide a high linearity, wide dynamic range and good stability for low-noise audio applications. Furthermore, it is also used as a high voltage switch in many Power Management ICs, such as DC-DC converters, power factor correction converters, etc. Additionally, it can be used as a low-resistance element for sensing circuits, such as bi-directional current detection or overcurrent detection. In addition, it can also be used in clocking or timing applications, or even as a controller element in telecommunications or networking equipment.
Next, let’s discuss the working principle of AOT3N50. In its most basic form, an AOT3N50 is composed of three highly conductive channels separated by a low-resistive silicon oxide layer. The gate terminal is used to control the output current through the source and drain (the drain being the output) by applying an appropriate voltage. Depending on the voltage applied to the gate terminal, electrical current will be either allowed (in saturation mode) or blocked (in cut-off mode) from flowing between the source and drain.
As mentioned earlier, the AOT3N50 is used mainly in analog circuits. In these types of circuits, the device is operated in triode region – a state between cut-off and saturation. This allows the current between the source and drain to be continuously adjusted and regulated by the Gate-Source voltage. AOT3N50 has a wide Gate-Source working range, allowing it to interface with a wide variety of input levels.
Lastly, it\'s important to note that even though the AOT3N50 is often used in analog applications, it can also be used in digital applications. In the latter case, the AOT3N50 works as a digital switch, allowing or blocking current flow in accordance with a given Gate-Source voltage level. This allows the device to act as either a buffer or switch depending on the application.
In conclusion, the AOT3N50 is a very popular single organic field-effect transistor (OFET) with a wide range of applications. It is composed of three highly conductive channels separated by a low-resistive silicon oxide layer and its Gate-Source voltage is used to control the flow of current between the source and drain. Furthermore, it can be used in both analog and digital applications to provide amplification, switching, buffering or sensing functions. As such, the AOT3N50 is an important component that is found in many modern electronics.
The specific data is subject to PDF, and the above content is for reference
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