Allicdata Part #: | 785-1186-5-ND |
Manufacturer Part#: |
AOT3N60 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 600V 2.5A TO-220 |
More Detail: | N-Channel 600V 2.5A (Tc) 83W (Tc) Through Hole TO-... |
DataSheet: | AOT3N60 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 370pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.5 Ohm @ 1.25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The AOT3N60 is a type of field-effect transistor (FET). FETs are a type of transistor in which the input current is controlled and amplified using an electronic or electromagnetic field. FETs are commonly used in amplifiers and other electronic circuits where power is being amplified. The AOT3N60 is specifically a type of metal-oxide-semiconductor field-effect transistor (MOSFET). The MOSFET is a type of FET that is capable of switching extremely high powers, making them ideal for use in high-power circuits. The AOT3N60 is a single-chip MOSFET, meaning that it has just one metal-oxide layer. In this case, the AOT3N60 is designed for use in automotive, industrial and telecommunications applications.
In terms of its working principle, the AOT3N60 is a voltage-controlled device. That is to say, a voltage applied between the source and drain terminals can control the flow of current between the source and drain. When the voltage from the gate terminal to the source is small (usually less than 0.7 volts), the device is said to be “off” and no current will flow between the source and drain. When the gate voltage is increased above this threshold (usually 0.7 to 2 volts), the device is said to be “on” and current flows between the source and drain. In other words, the AOT3N60 will act as a switch that can be controlled by the voltage applied to the gate terminal.
The AOT3N60 is also a type of power MOSFET. This means that it has high current-handling capabilities, making it suitable for use in power amplification and switching applications. It also has a very low on-resistance rating, meaning that very little power is dissipated in the device when it is “on”. This makes the AOT3N60 an efficient device that can be used in high-power circuits without creating a lot of excess heat. The AOT3N60 is also a type of N-channel MOSFET, which refers to the fact that the current can only flow from the source to the drain through an n-type channel.
In terms of its application field, the AOT3N60 is generally used as a switch or amplifier in automotive and industrial applications. It is commonly used in the control of motor speed, solenoid operation, and circuit protection. It is also often used in telecommunications applications, such as telephone networks, satellite communication systems and optical fiber systems. The AOT3N60 is well-suited for use in these applications because of its low on-resistance rating, high current-handling capabilities and low voltage threshold.
Overall, the AOT3N60 is an efficient and reliable N-channel MOSFET that is well suited for high-power applications. It can be used as a switch or an amplifier in automotive, industrial and telecommunications applications. It has a low on-resistance rating, allowing it to handle high currents without creating a lot of heat. Furthermore, its voltage threshold is low enough to make it easy to switch and control. With these features, the AOT3N60 is an excellent choice for powering or controlling a variety of electronic circuits.
The specific data is subject to PDF, and the above content is for reference
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